28-A A PROCEDURE FOR MEASURING N-CHANNEL MOSFET HOT-CARRIERINDUCED DEGRADATION UNDER DC STRESS Introduction Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability concern in modern microcircuits. High energy carriers, also called hot carriers, are generated in the ...
JESD28-1_HCI
principally from the solid state device manufacturer viewpoint. Within the JEDEC organization there are procedures whereby a JEDEC standard or publication may be further processed and ultimately become an ANSI standard. No claims to be in conformance with this standard may be made unless all requireme...