新公布的JESD51-14标准命名为“Transient Dual Interface Test Method for the Measurement of the Thermal Resistance Junction-to-case of semiconductor Devices with Heat Flow through a Single Path”(用于测试具有单一热传导路径的半导体器件结壳热阻的瞬态双层界面测试法)。该标准所使用的方法同样适用于表征热界面...
免费在线预览全文 JEDEC标准 EIA/JEDEC STANDARD Integrated Circuits Thermal Measurement Method - Electrical Test Method (Single Semiconductor Device) EIA/JESD51-1 DECEMBER 1995 ELECTRONIC INDUSTRIES ASSOCIATION ENGINEERING DEPARTMENT NOTICE JEDEC standards and publications contain material that has been prepared...
4GB ASFC4G31M-51BIN和8GB ASFC8G31M-51BIN是把带有eMMC控制器的NAND闪存与和闪存转换层(FTL)管理软件集成在单个的11.5毫米×13毫米,153球引脚的FBGA封装中。 器件符合JEDEC eMMC v5.1行业标准,支持比如引导操作这样的功能;内存重放保护区(RPMB);器件健康报告;现场固件更新;掉电通知;增强的选通功能可以更快和更...
JEDEC STANDARD Test Boards for Through-Hole Area Array Leaded Package Thermal Measurements JESD51-11 JUNE 2001 JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and ...
元件充电模式(CDM) ESD被认为是代表ESD充电和快速放电的首要实际ESD模型,能够恰如其分地表示当今集成电路(IC)制造和装配中使用的自动处理设备所发生的情况。到目前为止,在制造环境下的器件处理过程中,IC的ESD损害的最大原因是来自充电器件事件,这一点已广为人知。
(WG5.x) and is also a member of Systems and Simulators WG 14. He was appointed chair of WG 5.3.1, Charged Device Model, in 2008 and currently serves as ESDA Chairperson of the expanded Joint (ESDA/JEDEC) CDM Working Group, which recently completed the new ESDA/JEDEC Joint Standard JS...
106AA Page 1 STANDARD MANUFACTURER'S IDENTIFICATION CODE (Formerly JEDEC Board Ballot JCB-94-02, formulated under the cognizance of JC-42.3 Subcommittee on RAM Memories.) 1 Intent The intent of this identification code is that it may be used whenever a digital field is required, e.g., ...
JEDEC STANDARD IC Latch-Up Test JESD78A (Revisin f JESD78, March 1997) FEBRUARY 2006 JEDEC SOLID STA; JESD51-14标准翻译(修改版): 一维传热路径下半导体器件结壳热阻瞬态双界面测试法 前言 本文已在JEDEC JC-15关于热性能的会议上作了充分准备。旨在详细规定从半导体的热耗散结到封装外壳表面的一维传热路...
还应注意,虽然技术扩展对目标级别可能没有直接影响(至少低至14 nm),但这些高级技术改进了晶体管性能,进而也能支持更高IO性能(传输速率),因此对IO设计人员而言,实现当前目标级别同样变得很困难。由于不同测试仪的充电电阻不一致,已公布的ESD协会(ESDA)截止20204年路线图建议,CDM目标级别将需要再次降低,如图1所示。
The need for a harmonized CDM standard has never been greater. This, coupled with continued technology advancements, may also drive higher IO performance. This need for higher IO performance (and its need for reduced pin capacitance) may leave an IC designer with no other option othe...