Semiconductorsact as good conductors under some conditions but as poor conductors under others. In a semiconductor, both electrons and so-called holes -- electron absences -- act as charge carriers. Examples of
A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1×10 16 cm -3 or greater in a reducing gas atmosphere at 700°C or greater. Alternatively, a method of manufacturing a semiconductor substrate includes heat-treating ...
Electroreflectance spectroscopy was used to measure the direct transitions in strained Si1−xGex layers in the energy range from 3–6 eV. We were able to detect the transitions E1, E1 + Δ1, E′0, E0, E0 + Δ0, E2(X), E2(Σ) and E′1 for multiple samples with germanium concent...
aThe method allows the insulating layer formed between the germanium layer and the substrate to improve the electrical qualities of the structure, facilitates manufacturing of the structure, and ensures better adhesion of the germanium layer on the substrate. The heat treatment is performed in the ...
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There also has been considerable interest towards the ALD growth of silicon and germanium films, but due to the difficult precursor chemistry, this has not been very successful. The precursors used in an ALD process may be gaseous, liquid or solid. However, liquid or solid precursors must be ...
A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1×10 16 cm -3 or greater in a reducing gas atmosphere at 700°C or greater. Alternatively, a method of manufacturing a semiconductor substrate includes heat-treating ...
A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1×10 16 cm -3 or greater in a reducing gas atmosphere at 700°C or greater. Alternatively, a method of manufacturing a semiconductor substrate includes heat-treating ...
Silicon may, for example, be replaced by germanium and/or phosphorus; and aluminium more especially by boron, gallium, chromium or iron. Materials containing such replacement lattice elements are also generally termed zeolites, and the term is used in this broader sense in this specification. The...
A semiconductor device includes a gate electrode having higher Gibbs free energy for oxidation than a gate insulating film. An oxide semiconductor layer having a fin shape is formed