E. Burgess, The Electrical Conductivity of Germanium , Wiley, New York (1964).The Electrical Conductivity of Germanium - Paige - 1964E. G. S. Paige, The Electrical Conductivity of Germanium, Progress in Semiconductors, Vol. 8, Ed. by A. F. Gibson and R. E. Burgess (Wiley, New York,...
EFFECT of temperature on metalsThe temperature dependence of electrical conductivity of single-crystal and polycrystalline high-purity germanium (HPGe) samples has been investigated in the temperature range from 7 to 100K. The conductivity versus inverse of temperature curves for three single-crystal ...
electrical conductivityThe electrical conductivity of germanium vanadate glasses depends on the relative concentrations of V 4+ and V 5+ ions. It is found that by adding VCl 3 to the melt when the glass is formed, the added chlorine which acts as an oxidizing agent alters the ratio of ...
electrical conductivity due to electron scattering by crystal lattice defects. Electrical conductivity drops dramatically due to the scattering of electrons at solutes and precipitates in alloyed metals, while their mechanical strength increases significantly. So, processing of high-strength ultrafine-grained ...
If the cross-sectional area of the conductor increases, more electrons can drift through it, increasing its conductance. From equation (1) and (2), Where, σ = constant of proportional known as conductivity or specific conductance. Specific Conductance or Conductivity ...
Measurements have been made of the d.c. electrical conductivity 蟽 of amorphous germanium (a-Ge) films. These films were prepared by evaporation under a standard vacuum pressure of 10 Torr and were then exposed to air before being measured at 10 Torr. The temperature dependence of the ...
Fabrication, characterization, and physics of III–V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing. In 2011 International Electron Devices Meeting (IEDM) 33.6.1–33.6.4 (IEEE, 2011). Kim, S., Kam, H., Hu, C. & Liu, T.-J. Germanium-source ...
Experiments by Lark-Horovitz and collaborators on the Hall effect and resistivity of germanium semiconductors have shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity. Another probable source of resistance is scattering by ionized impurity ce...
Amorphous germanium prepared in ultra high vacuum and measured in situ: the D.C. electrical conductivityAmorphous germanium prepared in ultra high vacuum and measured in situ: the D.C. electrical conductivityExperimental/ electrical conductivity of amorphous semiconductors and insulatorselemental...
We have studied the contact potential and electrical conductivity as a function of time for thin n- and p-type germanium samples immediately after their preparation; the measurements were made for different orientations of the surface. These results, and field effect studies, indicate the absence ...