We report the data and a model showing that the energy loss experienced by the carriers flowing through breakdown spots is the primary cause of progressive breakdown spot growth. The experiments are performed in gate dielectrics of metal... Lombardo, Salvatore A,Wu, Ernest,Stathis, James H - ...
Intrinsic time-dependent dielectric breakdown in SiO2 dielectrics. Oxide Reliability Summary of Silicon Oxide Wearout, Breakdown, and Reliability, pages 135-171, 2001.J. W. McPherson. Physics and chemistry of intrinsic time-dependent dielectric breakdown in SiO2 dielectrics. International Journal of ...
about 20 to 30 % for all gate lengths down to 0.3 μm. This enhancement is attributed to an increased effective mobility in the Si_(0.7)Ge_(0.3) channel. The inclusion of a Si_(0.7)Ge_(0.3) channel was found to degrade neither the ...
Time‐dependent breakdown of oxynitride gate dielectrics under unipolar ac stress Time‐dependent dielectric breakdown under unipolar ac stress is investigated for control, nitrided, and reoxidized nitrided oxides, prepared by rapid ther... AB Joshi,DL Kwong,S Lee - 《Journal of Applied Physics》 ...
Discusses a complementary model for intrinsic time-dependent dielectric breakdown in silicon oxide dielectrics. Effect of time-dependent dielectric breakdown; Molecular models for dielectric degradation; Electron and hole injection into silicon oxide.McPherson...
Shanware, "Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics," Journal of Applied Physics, vol. 88, pp. 5351-5359, 1988.J. W. McPherson, R. B. Khamankar, and A. Shanware, "Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 ...
J. W. McPherson, "Physics and chemistry of intrinsic time-dependent dielectric breakdown in SiO2 dielectrics," in Oxide reliability: a summary of silicon oxide wearout, breakdown, and reliability, D. J. Dumin, Ed. Singapore: World Scientific Publishing Co. Pte. Ltd, 2002, pp. 135-171....
McPherson J W,Khamankar R B.Molecular Model for Intrinsic Time-dependent Dielectric Breakdown in SiO2 Dielectrics and the Reliability Implications for Hyper-thin Gate Oxide.Semiconductor Science &Technology. 2000J. McPherson and R. Khamankar, "Molecular model for intrinsic time- dependent dielectric ...
Fan YangInstitute of Electric and Electronic EngineerConduction and Breakdown in Solid Dielectrics, 1998. ICSD '98: Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98, 1998...
This is because the increase in V1 increased the work done by the Maxwell stress during the releasing process by enhancing the Maxwell stress. Thus, more mechanical energy can be converted into electrical energy. This also means that under the same film thickness, DE with higher breakdown ...