Using ICP etching in silicon MEMS device as an example, describes in detail in the reaction process of silicon based MEMS in the production process of ICP etching, explains how to realize the control of machining depth and angle in the ICP etching process. According to the development status ...
We developed an optimized inductively coupled plasma (ICP) etching process to produce GaAs pyramidal corrugated quantum well infrared photodetector focal plane arrays. A statistically-designed experiment was performed to optimize the etching parameters. The resulting parameters are discussed in terms of the...
Synonyms DRIE (Deep reactive ion etching) ; Advanced silicon etching (ASE™) ; Bosch process ; Switching etching ; Multiplexed time etchingSynonymsDRIE (Deep reactive ion etching) ; Advanced silicon etching (ASE™) ; Bosch process ; Switching etching ; Multiplexed time etchingDRIE (Deep ...
Keywords ICP etching ,Deep silicon etching ,Smooth and steep sidewall etching ,High aspect ratio etching ,Process parameters 摘要 感应耦合等离子体(ICP )刻蚀技术是微机电系统器件加工中的关键技术之一。利用英国STS 公司STS Multiplex 刻蚀机,研究了ICP 刻蚀中极板功率、腔室压力、刻蚀/钝化周期、气体...
和CCP(电容)Reaction chamber structures and main technical parameters of eight main plasma etching ...
1. During the etching process, the ICP power and RF bias power were ?xed at 300 W and 200 W, respectively. The total gas ?ow was 60 sccm, and the operating pressure was 7 mTorr. The DC bias voltage decreased from ?576 V for 16%Cl2 /84%BCl3 to ?560 V for 84%Cl2 /16%BCl3...
4、 Because the ICP tech no logy in the process of process ing high con trollability, plays a more and more important role. Using ICP etching in silicon MEMS device as an example, describes in detail in the reaction process of silicon based MEMS in the product ion process of ICP etch ...
被刻蚀的物质变成挥发性的气体,经抽气系统抽离,最后按照设计图形要求刻蚀出我们需要实现的深度 Dry Etching Characteristics Advantages: Anisotropic etch profile is possible Chemical consumption is small Disposal of reaction products less costly Suitable for automation, single wafer, cassette to cassette ...
1刻蚀：通过物理和/或化学方法将下层材料中没有被上层掩蔽膜材料掩蔽的部分去掉，从而在下层材料上获得与掩蔽膜图形完全对应的图形。光刻 湿法刻蚀与干法刻蚀 湿法刻蚀即利用特定的溶液与薄膜间所进行的化学反应来去除薄膜未被光刻胶掩膜覆盖的部分，而达到刻蚀的目的。WetEtchingCharacteristics •Advantages:Simple...
3 ICP etching process of Cr in gratings of near-eye display devices WANG Heming,ZHOU Yanping,ZUO Chao,YANG Bingjun ( ULVAC Research Center Suzhou Co. , Ltd. , Suzhou 215026, China) Abstract: With the advent of the global information age, augmented reality ( AR) technology has now ...