Hamakawa, "Hydrogenated amorphous silicon carbide as a window material for high efficiency a-Si solar cells," Solar Energy Materials, vol. 6, no. 3, pp. 299-315, Mar. 1982.Hydrogenated amorphous silicon carbide as a window material for high efficiency a-Si solar cells.". Tawada, Y,Kondo...
Dan Kuhman,Steve Grammatica and Frank Jansen.Properties of hydrogenated amorphous silicon carbide films prepared by plasma-enhanced chemical vapor deposition. Thin Solid films . 1989Kuhman D, Grammatica S, Jansen F. Properties of Hydrogenated Amorphous Silicon Carbide Films Prepared by Plasma-enhanced ...
Low-Temperature Growth of Hydrogenated Amorphous Silicon Carbide Solar Cell by Inductively Coupled Plasma Deposition Toward High Conversion Efficiency in Indoor LightingA p-a-SiC:H window layer was used in amorphous Si thin film solar cells to boost the conversion efficiency in an indoor lighting of...
Emission of blue light from hydrogenated amorphous silicon carbide. Nevin W A,Yamagishi H,Yamaguchi M,et al. Nature . 1994Nevin WA, Yamagishi H, Yamguchi M, Tawada Y: Emission of blue light from hydrogenated amorphous silicon carbide. Nature 1994, 368:529-531....
,“Novel Passivation Dielectrics-The Boron- or Phosphorus-Doped Hydrogenated Amorphous Silicon Carbide Films”, Journal of the Electrochemical Society, 132, (Feb. 1985),418-422. ;, (Feb. 1985),418-422.Chang, C., " Novel Passivation Dielectrics-The Boron- or Phosphorus-Doped Hydrogenated ...
amorphous hydrogenated silicon carbide; plasma enhanced chemical vapor deposition (PECVD); small-angle X-ray scattering (SAXS). Amorphous hydrogenated silicon carbide thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) at temperatures ranging from 573 to 623 K, with differen...
Fabricating a hydrogenated amorphous silicon carbide film having through-pores involves forming a film (f1) consisting of an amorphous hydrogenated silicon carbide matrix in which silicon oxide through-nanowires are dispersed, on a substrate; and selectively destructing the silicon oxide nanowires present...
Hydrogenated amorphous carbon films have been prepared from CH_4+H_2+Ar mixtures by plasma enhanced chemical vapor deposition. Films with various physical ... LH Chou - 《真空科学与技术学报》 被引量: 232发表: 1992年 Properties of hydrogenated amorphous silicon carbide films prepared by plasma-en...
A correction to the article "The Absorption Spectrum of Hydrogenated Silicon Carbide Nanocrystals From ab initio Calculations" that was published in a prev... M Vörös,Ṕter Deák,T Frauenheim,... 被引量: 1发表: 2015年 Infrared Spectrum and Structure of Hydrogenated Amorphous Silicon The ...
Hydrogenated amorphous silicon carbidCharge carrier transportSpace-charge limited currentPoole-Frenkel effectWe report on the conduction mechanisms at room temperature of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films deposited by 13.56 MHz plasma-enhanced chemical vapor deposition (PECVD). ...