It applies for a VGS between the threshold voltage and the first rise after the plateau voltage (the end of the plateau). During this phase the MOSFET changes from off-state to on-state. The shorter the time is when that happens the lower are the losses made during this transition. In ...
267 ns . 400 ns This time is used to filter the spike on the PFC_CS pin at the PFC MOSFET turn-on. During this time the PFC_CS comparator output (THD improver) is ignored. Use Adjust the blanking time according to design requirements. The middle value 267 ns can be...
Equation 4 is used to calculate the inductor value. LM_calc_2 = 1.6A 6V ∙ 0.6 ∙ 2.1MHz ∙ 0.5 = 1.49µH (4) A standard inductance of 1.5µH is selected for the value of LM to cover the requirement of both regions. The maximum peak inductor current occurs when the ...
Based on the total power losses value (Pbridge) and based on the maximum acceptable bridge-diode's junction temperature target (e.g. Tj_bridge,max=125 °C), it is possible to calculate the maximum thermal resistance of the heatsink required to keep the bridge-diode...
Calculate the peak power of the resistor and check it against its single-pulse rating. These measurements will confirm if the assumptions and calculations result in safe switching behavior (no oscillation, proper timing) of the SiC MOSFET. If not, the designer must repeat Steps 1 through 4 with...
For further explanation of key gate driver parameters mentioned previously, see Fundamentals of MOSFET and IGBT Gate Driver Circuits. 2 This parameter refers to the rise and fall time of the power switch's input (for example, the gate of the MOSFET). This is also closely related to the ...
Keep in mind that during the summer, the ambient temperature may rise to 100° F = 38° C. With these data in hand, you could calculate ΔT, or the predicted temperature differential between the yet-to-be known heatsink size and the air that would facilitate cooling. ...
Time constant determined by transformer's stray capacitance and transistor's gate capacitance.Q6 drain: needs a snubber. dV/dt preferred. C = Ipk / (2*Vin / tr). tr is the desired rise time, usually similar to the gate time constant (for IRF840, Cg ~= 6nF, and if R30 = 10 ohms...
more and moreelectronic companies in the worldare shifting to RoHS. This has given rise to another form of solder called lead-free solder. This solder is called lead-free because there is no lead in it. Lead-free solder alloys melt around 250°C (482°F), depending on their composition....
The device then uses this information to calculate back EMF and then motor position. Motor speed is determined by the number of zero crossings of one phase’s back EMF in a unit time. The chip also allows for phase-angle advance to align phase current with back EMF for maximum efficiency....