网络高介电系数材料 网络释义 1. 高介电系数材料 随著元件尺寸不断的微缩,高介电系数材料(High-k material)势必将取代传统二氧化矽作为先进半导体制程中元件的闸极介电层 … etdncku.lib.ncku.edu.tw|基于6个网页
Reports that a group of Bell Laboratories researchers has developed a high dielectric constant (high-K) material that may become a contender for use in capacitor and gate oxide structures in devices. Overview of the rese...
A dry etch method, apparatus, and system for etching a high-k material comprises sequentially contacting the high-k material with a vapor phase reducing agent, and a volatilizing etchant in a cyclical process. In some preferred embodiments, the reducing agent and/or volatilizing etchant is pla...
Epitaxial multi-component rare-earth oxide: A high- k material with ultralow mismatch to Si New gate dielectric substitute for high- k application requires well matched lattice parameters and an atomically defined interface with Si for optimal per... J Wang,T Liu,Z Wang,... - 《Materials Le...
The direct deposition of high-k material on silicon would initiate the issues related to interface quality, process compatibility, thermal stability, and reliability and thus lead to deterioration of the electrical performance of the device. To reconcile this issue, the high-k material layer is ...
"High-k" stands for high dielectric constant, a measure of how much charge a material can hold. Air is the reference point for this constant and has a "k" of 1.0. Silicon dioxide (the "old-fashioned" gate material) has a "k" of 3.9. "High-k" materials, such as hafnium dioxide ...
Interfacial oxidation process for high-k gate dielectric process integration A method for integrating a high-k material into CMOS processing schemes is provided. The method includes forming an interfacial oxide, oxynitride and/or nitride layer on a device region of a semiconductor substrate, said ...
Hafniumoxideisahigh-kdielectricmaterialwhichhavedielectricconstantof 25,high-kdielectricmaterialusetobeagateoxidecandecreasethethresholdvoltage anddevicescaleforlowvoltageandmicroelectronics.Organicthinfilmtransistors hasbeenusedtofabricatesoftelectronicsdevices.TheactivelayersforOTFTsis numerous,pentaceneforourresearchisone...
可以缩短信号传播延时,这样就为提升芯片速度留下了一定空间.(2) Low-k材料的选择Table 1 History SummaryItemsMetalDielectricConventionalAlSiO2 (K=4.0)IBM, 1997/JulCuSiO2 (K=4.0>Intel, 1998AlFSG (K=3.6)Motorola, 1998CuFSG(K=3.6)Applied Material, 1998CuLOW-K (K=2.7)Table 2 Current Industry ...
Physical models of the 18nm NMOS were used for simulation from Al2O3, HfO2, and TiO2 as the material gate dielectric, with TiSi2 as the metal gate, which provide higher physical thickness that able to reduce the sub-threshold leakage current IOFF. Thus, excellent dielectric properties such...