MOSFETHigh Voltage P-channel RF MOSFET was designed and fabricated by a proprietary self-aligned VDMOS process. When this device was used for class C application at an operating frequency of 40.68 MHz and drain bias of 125V, the CW output power can reach 350 W, and power gain is 18dB. ...
希望利用MOS的低导通压降，并且要避免MOS的寄生二极管引起电流倒灌，于是就把P-MOS反接了。
有两个n沟道和p沟道的高电流MOSFET开关。 翻译结果2复制译文编辑译文朗读译文返回顶部 有N 渠道和 P 渠道高当前 MOSFET 开关。 翻译结果3复制译文编辑译文朗读译文返回顶部 有N 沟道和 P 沟道高电流 MOSFET 开关。 翻译结果4复制译文编辑译文朗读译文返回顶部 ...
SPW47N60C3 SPW47 High Power Channel MOSFET New Integrated Circuit 20N60S5 24N60C3 32N50 35N60 SPW47 SPW47N60C3 5.0(1 review)501 sold Shenzhen Yingjia Core Technology Co., Ltd.Multispecialty supplier1 yrCN Previous slideNext slide Previous slideNext slideKey attributes Other attributes Place of...
High Ion and Ion/Ioff ratio enhancement-mode buried p-channel GaN MOSFETs on p-GaN gate power HEMT platform. IEEE Electron Device Lett. 41, 26–29 (2020). Article Google Scholar Raj, A. et al. Demonstration of a GaN/AlGaN superlattice-based p-channel FinFET with high ON-current. ...
IRF640B MOSFET N-channel MOSFET IRF640B IRFS640B 200V N-channel MOSFET $0.475 - $0.52 Min. order: 100 pairs Rectifier diodes bridge GBP310 3A 1000V rectifier for tv box Large chip with large current bridge rectifier $0.03 - $0.05 Min. order: 100 pieces TRIAC BTA08-600C 600V 8A TO...
The device fabricated was an ultrathin SOI MOSFET capable of operating at a current 1.5 times that of conventional hundred-nm devices at low voltages关键词: MOSFET buried layers silicon-on-insulator wafer bonding MOS process PSI wafer buried thin backgate oxide direct bonding epitaxial channel ...
The circuit in Figure 1 shows a typical example of high-side current sense. Negative feedback tries to force the voltage VSENSE upon gain resistor RGAIN. The current through RGAIN flows through P-channel MOSFET (PMOS) to resistor ROUT, which develops a ground referenced output voltage. The ...
产品种类: MOSFET RoHS: 是 安装风格: Through Hole 封装/ 箱体: TO-220-3 晶体管极性: N-Channel 通道数量: 1 Channel Vds-漏源极击穿电压: 650 V Id-连续漏极电流: 11 A Rds On-漏源导通电阻: 320 mOhms Vgs - 栅极-源极电压: - 25 V, + 25 V Vgs th-栅源极阈值电压: 2 V Qg-栅极电荷...
The LTC1693-5 contains an undervoltage lockout circuit and a thermal shutdown circuit that disables the external P-channel MOSFET gate drive if activated. The LTC1693-5 comes in an 8-lead MSOP package. 特点 Single MOSFET Driver in MSOP Package 1.5A Peak Output Current 16ns Rise/Fall Times ...