铁电表面界面HfO2真空互联原位HfO;基铁电电容器,特别是TiN/Hf_(x)Zr_(1-x)O_(2)/TiN金属-绝缘体-金属电容器,由于其良好的稳定性,高性能和互补金属氧化物半导体(CMOS)兼容性,在新一代非易失性存储器中有着广阔的应用前景.由于TiN/Hf_(x)Zr_(1-x)O_(2)/TiN电容器的电性能与Hf_(x)Zr_(1-x)O_...
hfxzr1xo2铁电薄膜的制备与电性能研究-preparation and electrical properties of hf xzr 1xo2 ferroelectric thin films.docx,摘要铁电薄膜材料在信息技术的各个领域都有着广泛的应用。传统钙钛矿结构的铁电薄膜应用于硅基铁电器件上已被证实具有诸多困难,如铁电尺寸效应
Z.-P. Wu, J. Zhu, and X.-P. Liu, "Resistive switching properties of HfxZr1-xO2 thin films for flexible memory applications," Journal of Materials Science-Materials in Electronics, vol. 28, no. 14, pp. 10625-10629, 2017.Z.-P. Wu, J. Zhu, and X.-P. ...
Ferroelectric HfxZr1-xO2 thin filmLow temperature fabrication processHigh-k materialWe investigated the characteristics of 10-nm-thick ferroelectric Hf0.43Zr0.57O2 (HZO) thin films fabricated using plasma-enhanced atomic layer deposition (PE-ALD) at 300 degrees C with plasma O-2 gas and a post ...
Thin HfxZr1-xO2 films: a new lead-free system for electrostatic supercapacitors with large energy storage density and robust thermal stability. Adv Energy Mater. 2014;4:1400610.M.H. Park et al. 2014. Thin HfxZr1‐xO2 Films: A New Lead‐ Free System for Electrostatic Supercapacitors with ...
HfxZr1−xO2negative capacitanceThe negative capacitance (NC) effect in ferroelectric materials provides a possible solution to break the Boltzmann tyranny and realize steep‐slope field‐effect transistors (FETs) with sub‐60 mV dec?1 subthreshold slope (SS). HfO2‐based ferroelectrics (FE) have ...
TiN/HfxZr1xO2/TiN 铁电电容器的原位生长与表征doi:10.3866/PKU.WHXB202006016Acta Physico-Chimica Sinica殷宇豪沈阳王虎陈肖邵林华文宇王娟崔义
Ferroelectricity of HfxZr1xO2 Thin Films Fabricated Using TiN Stressor and ZrO2 Nucleation Techniquesdoi:10.1149/08606.0031ecstTakashi OnayaToshihide NabatameNaomi SawamotoKazunori KurishimaAkihiko OhiNaoki IkedaTakahiro NagataAtsushi OguraThe Electrochemical SocietyAiMES 2018 Meeting (September 30 - October 4...
Raymond, "X-ray metrology for high-k atomic layer deposited HfxZr1-xO2 films," Microelectronic Engineering, 85, 1, 49-53, 2008. :X-ray metrology for high- k atomic layer deposited Hf x Zr 1? x O 2 films[J] . Jesus J. Gallegos,Dina H. Triyoso,Mark Raymond.Microelectronic ...
MRS Online Proceedings Library - In this paper the impact of post deposition annealing in various ambient on electrical properties of hafnium zirconate (HfxZr1-xO2) high-k dielectrics is reported...Triyoso, D. H.Technology Solutions Organization, Freescale Semiconductor Inc., Austin, U.S.A.Hegde...