HfxZr1-xO2Coherent epitaxialSingle crystallinityDue to remarkable high-k and ferroelectric properties in CMOS devices, the study of crystalline Hf x Zr 1-x O 2 (HZO) thin films has attracted tremendous interest recently. However, up to now, the epitaxial growth of HZO films has only been ...
hfxzr1xo2铁电薄膜的制备与电性能研究-preparation and electrical properties of hf xzr 1xo2 ferroelectric thin films.docx,摘要铁电薄膜材料在信息技术的各个领域都有着广泛的应用。传统钙钛矿结构的铁电薄膜应用于硅基铁电器件上已被证实具有诸多困难,如铁电尺寸效应
Thin HfxZr1-xO2 films: a new lead-free system for electrostatic supercapacitors with large energy storage density and robust thermal stability. Adv Energy Mater. 2014;4:1400610.Park, M. H. et al. Thin HfxZr1 A xO2 films: a new lead-free system for electrostatic supercapacitors with large...
铁电表面界面HfO2真空互联原位HfO;基铁电电容器,特别是TiN/Hf_(x)Zr_(1-x)O_(2)/TiN金属-绝缘体-金属电容器,由于其良好的稳定性,高性能和互补金属氧化物半导体(CMOS)兼容性,在新一代非易失性存储器中有着广阔的应用前景.由于TiN/Hf_(x)Zr_(1-x)O_(2)/TiN电容器的电性能与Hf_(x)Zr_(1-x)O_...
Ferroelectric HfxZr1-xO2 thin filmLow temperature fabrication processHigh-k materialWe investigated the characteristics of 10-nm-thick ferroelectric Hf0.43Zr0.57O2 (HZO) thin films fabricated using plasma-enhanced atomic layer deposition (PE-ALD) at 300 degrees C with plasma O-2 gas and a post ...
HfxZr1−xO2negative capacitanceThe negative capacitance (NC) effect in ferroelectric materials provides a possible solution to break the Boltzmann tyranny and realize steep‐slope field‐effect transistors (FETs) with sub‐60 mV dec?1 subthreshold slope (SS). HfO2‐based ferroelectrics (FE) have ...
Unique polar properties of nanoscale hafnia-zirconia oxides (HfxZr1xO2) are of great interest for condensed matter physics, nanophysics, and advanced applications. These properties are connected (at least partially) to the ionic鈥揺lectronic and electrochemical phenomena at the surface, interfaces, ...
Raymond, "X-ray metrology for high-k atomic layer deposited HfxZr1-xO2 films," Microelectronic Engineering, 85, 1, 49-53, 2008. :X-ray metrology for high- k atomic layer deposited Hf x Zr 1? x O 2 films[J] . Jesus J. Gallegos,Dina H. Triyoso,Mark Raymond.Microelectronic ...
HfxZr1-xO2磁控溅射退火MIM结构采用磁控溅射法制备了Zr含量占比为0.134和0.156的TiN/HfxZr1-xO2/TiN结构的薄膜器件;对该器件进行了不同条件下的退火实验;研究了HfxZr1-xO2器件的电流,极化和循环特性;以及特性随退火温度和退火时间改变的变化规律;并结合微观结构表征手段;对器件特性随退火条件变化的规律做出了解释;在...
Ferroelectricity of HfxZr1xO2 Thin Films Fabricated Using TiN Stressor and ZrO2 Nucleation Techniquesdoi:10.1149/08606.0031ecstTakashi OnayaToshihide NabatameNaomi SawamotoKazunori KurishimaAkihiko OhiNaoki IkedaTakahiro NagataAtsushi OguraThe Electrochemical SocietyAiMES 2018 Meeting (September 30 - October 4...