閘極電流 Hf1-xZrXO2Dynamic Negative Bias StressDynamic Positive Bias StressGate Current在本論文中,藉由不同量測方法(DC Id-Vg, charge pumping)發現隨著p-MOSFETs金屬閘極中的鋯含量增加,臨界電壓顯著的下降,載子遷移率上升,汲極電流上升,此為摻入鋯能讓介電常數上升以及降低結晶粒度尺寸.在動態負偏壓後量...
However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here, we report a CMOS compatible FeFET cell with low operating voltage. We engineer the ferroelectric Hf1-xZrxO2 (HZO) thin film to form negative ...
Thin Solid FilmsI. P. Studenyak, M. Kranjcˇec, O. T. Nahusko, and O. M. Borets, “ Influence of Hf→Zr substitution on optical and refractometric parameters of Hf1−xZrxO2 thin films,” Thin Solid Films vol. 476, pp. 137-141, 2005. :...
Hf1–xZrxO2high‐k dielectricsThe field﹊nduced ferroelectric Hf1–xZrxO2 (FFE–HZO) thin film is investigated for use as the capacitive layer in the future dynamic random access memory (DRAM). Although the dielectric permittivity of FFE–HZO is as high as ≈80, a high electric field (4 ...
Morphotropic Phase Boundary of Hf1-xZrxO2 Thin Films for Dynamic Random Access MemoriesferroelectricityDRAMdoped hafnium oxidescalingcapacitorThe utilization of the morphotropic phase boundary (MPB) between the newly found ferroelectric orthorhombic phase and the tetragonal phase in an HfO2-ZrO2 solid ...
Recent understanding of the influence of oxygen supplied during film deposition on the structural phase formation process in Hf1-xZrxO2 films has drawn attention to a commonly overlooked parameter for tuning ferroelectric and electrical properties of these films. In this paper, a comparison of O-3 ...
Impact of Zr Content in Atomic Layer Deposited Hf1 xZrxO2 Thin Films - ScienceDirectdoi:10.1016/B978-0-08-102430-0.00007-3Min Hyuk Park aHan Joon KimKeum Do KimYoung Hwan LeeSeung Dam HyunCheol Seong HwangFerroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices...
Thickness scaling of pyroelectric response in thin ferroelectric Hf1-xZrxO2 filmsThe scaling of polarization and pyroelectric response across a thickness series (5-20 nm) of Hf0.58Zr0.42O2 films with TaN electrodes was characterized. Reduction in thickness from 20 nm to 5 nm resulted in a ...
Ferroelectric (FE) Hf1−xZrxO2 is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally characterizes and demonstrates the FE and antiferroelectric...