閘極電流 Hf1-xZrXO2Dynamic Negative Bias StressDynamic Positive Bias StressGate Current在本論文中,藉由不同量測方法(DC Id-Vg, charge pumping)發現隨著p-MOSFETs金屬閘極中的鋯含量增加,臨界電壓顯著的下降,載子遷移率上升,汲極電流上升,此為摻入鋯能讓介電常數上升以及降低結晶粒度尺寸.在動態負偏壓後量...
Hf1-xZrxO2 films have attracted significant attention for applications in ferroelectric memory and negative capacitance transistors due to their ferroelectric properties and high compatibility to CMOS integration. X-ray photoelectron spectroscopy (XPS) was utilized to characterize the energy band alignments ...
Thin Solid FilmsI. P. Studenyak, M. Kranjcˇec, O. T. Nahusko, and O. M. Borets, “ Influence of Hf→Zr substitution on optical and refractometric parameters of Hf1−xZrxO2 thin films,” Thin Solid Films vol. 476, pp. 137-141, 2005. :...
Hf1–xZrxO2high‐k dielectricsThe field﹊nduced ferroelectric Hf1–xZrxO2 (FFE–HZO) thin film is investigated for use as the capacitive layer in the future dynamic random access memory (DRAM). Although the dielectric permittivity of FFE–HZO is as high as ≈80, a high electric field (4 ...
density, Dit by conductance method for two different processing conditions: (1) cyclic deposition and slot-plane-antenna (SPA) Ar plasma exposure, DSDS, and (2) cyclic deposition and annealing, DADA, during the deposition of ALD Hf1-xZrxO2 to fabricate the TiN/Hf1-xZrxO2/SiON/Si gate ...
strainwake-up effectBy utilizing the combined analyses of X-ray diffraction and X-ray absorption spectroscopy, a systematic identification on the crystal phases of the polymorphic Hf1–xZrxO2 thin films with various series of preparation conditions was presented. The results of the rigorous ...
Morphotropic Phase Boundary of Hf1-xZrxO2 Thin Films for Dynamic Random Access MemoriesferroelectricityDRAMdoped hafnium oxidescalingcapacitorThe utilization of the morphotropic phase boundary (MPB) between the newly found ferroelectric orthorhombic phase and the tetragonal phase in an HfO2-ZrO2 solid ...
Optimization is a major challenge since the phase formation depends significantly on many influencing variables that are only partially understood so far. The Curie temperature is identified as an important parameter for understanding the behavior, since it depends sensitively on Zr...
However, it poses significant limitations, such as high leakage current density and low endurance, which must be addressed to ensure its applicability in Hf1-xZrxO2-based memories. The insertion of a TiN interlayer has been proven to effectively reduce the oxidation of a Mo electrode and ...
Demonstration of 1 V Reliable FeRAM Operation: Vc Engineering Using Quasi-Chirality of Hf1–xZrxO2 in a Nanolaminate Structuredoi:10.1021/acsami.4c08641Hafnia thin films are known to demonstrate excellent performance with strong ferroelectricity and high scalability, making them promising candidates ...