HDP-FSG has been integrated as an inter-metal dielectric in a multilevel interconnect scheme. Process regimes for obtaining stable HDP-FSG films were identified. Gap-fill of high aspect ratio structures was achieved for 0.18碌m technology node. HDP-FSG film stability, homogeneity, and impurity ...
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No. 09/569,744 entitled “Method for Improving Barrier Layer Adhesion to HDP-FSG Thin Films,” filed May 11,2000, and assigned to Applied Materials, Inc., assignee of the present application, the complete disclosure of which is incorporated herein by reference. Previous attempts to improve the...
Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (...
A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote...
PURPOSE: A Method for depositing fluorinated silica glass layers is provided to form a damascene FSG film which has good adhesion to silicon nitride in an HDP-CVD system. CONSTITUTION: A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system....
PROBLEM TO BE SOLVED: To provide a method of forming a damascene FSG film having a good adhesion to silicon nitride in the HDP-CVD system.M SAAD HICHEMヒケム ムサッドTRIBULA DANAダナ トリブーラMANOJU VERAIKARUマノジュ ヴェライカル...