HDP-FSG has been integrated as an inter-metal dielectric in a multilevel interconnect scheme. Process regimes for obtaining stable HDP-FSG films were identified. Gap-fill of high aspect ratio structures was achieved for 0.18渭m technology node. HDP-FSG film stability, homogeneity, and impurity ...
SiH4 +O2 —→USG+挥发物 (2)氟硅(酸盐)玻璃(fluorosilicate glass,FSG) SiH4 +SiF4 +O2 —→FSG+挥发物 (3)磷硅(酸盐)玻璃(phosphosilicate glass,PSG) SiH4 +PH3 +O2 —→PSG+挥发物 HDP-CVD工艺重要参数-沉积刻蚀比:在半导体业界,普遍采用沉积刻蚀比(DS ratio)作为衡量HDP-CVD工艺填孔能力的指标,沉...
在HDP CVD工艺问世之前，大多数芯片厂普遍采用等离子体增强化学气相沉积(PE CVD)进行绝缘介质的填充。这种工艺对于大于0.8微米的间隔具有良好的填孔效果，然而对于小于0.8微米的间隔，用PE CVD工艺一步填充具有高的深宽比(定义为间隙的深度和宽度的比值)的间隔时会在间隔中部产生夹断(pinch-off)和空洞(图2)。图...
This paper describes an emissions reduction program for three Ultima HDP-CVD processes: PSG, USG, and FSG deposition and chamber clean. Quantitative QMS and FTIR measurements show that during thin film deposition the SiH_4 is fully utilized, while for FSG films, the SiF_4 emissions associated ...
二、HDP工艺应用(2)lowkIMD(PSGFSG)减少寄生电容,吸收Na离子等;(3)孔槽填充的PMDUSG,填充性能 三、HDP工艺与其他工艺对比工艺类别台阶覆盖性膜质致密性优点缺点温度PVD---杂质少,膜质稳定台阶覆盖差200-400℃PECVD成膜速度快Plasma损伤350-400℃SACVD台阶覆盖好,无plasma损伤膜质酥松,杂质多,淀积速率慢450-500℃...
FSG PW45W3,Article Nr.1302Z10-000.001(5KΩ± 5%) Honsberg RRI-025GVQ080V10KPS-10 Gebr·steimel GmbH LDM090-04-901 Mankenberg KA 3 G 1/2“ 0-4Bar 70190616A-3 1.4571 AISI 316Ti BACO 16A1132 HENGSTLER BIS-M18-A23X gemmecotti FLANGE PVC DN 65-50 ( FOR HTM 31 PP ) INTERNORMEN 滤...
根据沉积的绝缘介质掺杂与否及掺杂的种类,常见的有以下几种: (1)非掺杂硅(酸盐)玻璃(u⒈doped silicate glass,USG)⒏H4+02―→USG+挥发物 (2)氟硅(酸盐)玻璃(flu。rosilicatc glass,FSG)⒏H4+SiF4+02―→FSG+挥发物 (3)磷硅(酸盐)玻璃(phosphosilicate glass,PSG) SiH4+PH3+02―→PSG+挥发物...
复星犬学工程硕士逢文 第一黎文牵绿遴 第～章文章综述 髓着集躐电路的发袋,半导体的集藏度越来趣离,半署体的尺寸越来越小, 因此对薄膜的填隙性(FilmGapfill)能力的要求也越来越赢。甚至有观点认为, 薄膜的填隙能力衣某种程度上,已经成为半导体器件向更小尺寸发展过程中的～ 个瓶凝。 §1.1.暾眉垂盛 农趣...
By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the ... M Hichem,T Dana,V Manoj,... 被引量: 0发表: 2001年 In-situ-etch-assisted HDP deposition using SiF4 A process is provided for depositing an undoped silicon oxide ...
网络高密度电浆化学气相沉积;高密度电浆化学沉积;高密度电浆化学气相沈积 网络释义