HDP-FSG has been integrated as an inter-metal dielectric in a multilevel interconnect scheme. Process regimes for obtaining stable HDP-FSG films were identified. Gap-fill of high aspect ratio structures was achieved for 0.18渭m technology node. HDP-FSG film stability, homogeneity, and impurity ...
Wikipedia Category filter: AcronymDefinition HDPHTML (HyperText Markup Language) Design Principles HDPHijo de Puta(Spanish: Son of a Bitch) HDPHerbes de Provence(French herbs) HDPHeavy Duty Professional(warranty) HDPHigh Definition Printing HDPHermes Data Processing ...
二、HDP工艺应用(2)lowkIMD(PSGFSG)减少寄生电容,吸收Na离子等;(3)孔槽填充的PMDUSG,填充性能 三、HDP工艺与其他工艺对比工艺类别台阶覆盖性膜质致密性优点缺点温度PVD---杂质少,膜质稳定台阶覆盖差200-400℃PECVD成膜速度快Plasma损伤350-400℃SACVD台阶覆盖好,无plasma损伤膜质酥松,杂质多,淀积速率慢450-500℃...
SiH4 +O2 —→USG+挥发物 (2)氟硅(酸盐)玻璃(fluorosilicate glass,FSG) SiH4 +SiF4 +O2 —→FSG+挥发物 (3)磷硅(酸盐)玻璃(phosphosilicate glass,PSG) SiH4 +PH3 +O2 —→PSG+挥发物 HDP-CVD工艺重要参数-沉积刻蚀比:在半导体业界,普遍采用沉积刻蚀比(DS ratio)作为衡量HDP-CVD工艺填孔能力的指标,沉...
在HDP CVD工艺问世之前，大多数芯片厂普遍采用等离子体增强化学气相沉积(PE CVD)进行绝缘介质的填充。这种工艺对于大于0.8微米的间隔具有良好的填孔效果，然而对于小于0.8微米的间隔，用PE CVD工艺一步填充具有高的深宽比(定义为间隙的深度和宽度的比值)的间隔时会在间隔中部产生夹断(pinch-off)和空洞(图2)。图...
根据沉积的绝缘介质掺杂与否及掺杂的种类,常见的有以下几种: (1)非掺杂硅(酸盐)玻璃(u⒈doped silicate glass,USG)⒏H4+02―→USG+挥发物 (2)氟硅(酸盐)玻璃(flu。rosilicatc glass,FSG)⒏H4+SiF4+02―→FSG+挥发物 (3)磷硅(酸盐)玻璃(phosphosilicate glass,PSG) SiH4+PH3+02―→PSG+挥发物...
SiOF(固态)+副产物(2-5)FSG薄膜因掺氟具有的低介电属性,被广泛应用于0.18μm以下的半导体工艺中。在小尺寸器件应用中,PECVD工艺的主要局限是间隙填充。当间隔宽度小于0.5μm的情况下时,用PECVD工艺填充高的深宽比间隙会损伤顶部并产生空洞。要避免这种情况的产生,对0.25μm及以后技术节点的器件,HDPCVD因其良好的...
By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the ... M Hichem,T Dana,V Manoj,... 被引量: 0发表: 2001年 In-situ-etch-assisted HDP deposition using SiF4 A process is provided for depositing an undoped silicon oxide ...
网络高密度电浆化学气相沉积;高密度电浆化学沉积;高密度电浆化学气相沈积 网络释义
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