HDP-FSG has been integrated as an inter-metal dielectric in a multilevel interconnect scheme. Process regimes for obtaining stable HDP-FSG films were identified. Gap-fill of high aspect ratio structures was achieved for 0.18碌m technology node. HDP-FSG film stability, homogeneity, and impurity ...
SiH4 +O2 —→USG+挥发物 (2)氟硅(酸盐)玻璃(fluorosilicate glass,FSG) SiH4 +SiF4 +O2 —→FSG+挥发物 (3)磷硅(酸盐)玻璃(phosphosilicate glass,PSG) SiH4 +PH3 +O2 —→PSG+挥发物 HDP-CVD工艺重要参数-沉积刻蚀比:在半导体业界,普遍采用沉积刻蚀比(DS ratio)作为衡量HDP-CVD工艺填孔能力的指标,沉...
复星犬学工程硕士逢文 第一黎文牵绿遴 第～章文章综述 髓着集躐电路的发袋,半导体的集藏度越来趣离,半署体的尺寸越来越小, 因此对薄膜的填隙性(FilmGapfill)能力的要求也越来越赢。甚至有观点认为, 薄膜的填隙能力衣某种程度上,已经成为半导体器件向更小尺寸发展过程中的～ 个瓶凝。 §1.1.暾眉垂盛 农趣...
Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (...
随着半导体技术的飞速发展,半导体器件特征尺寸的显著减小,相应地也对芯片制造工艺提出了更高的要求,其中一个具有挑战性的难题就是绝缘介质在各个薄膜层之间均匀无孔的填充以提供充分有效的隔离保护,包括浅槽隔离(STI),金属前绝缘层(PMD),金属层间绝缘层(IMD)等等。本文所介绍的高密度等离子体化学气相淀积(HDPCVD)工艺...
宾克斯(Binks)、兰氏(Ransburg)涡轮、德马格(Demag)、史强米格(Stromag)、HBM力传感器、HSB滚珠丝杠、科尔摩根 (Kollmorgen)、特威/DEVILIBISS 喷枪、FSG电位器、baumuller(包米勒)电机、驱动器、Wolfgang Warmbier、VOGEL减速器减速机、Coherent传感器、Holland、TECNA、baumer、Eurotherm Epower、buderus、Jahns、suco、BENTH...
1) HDP-CVD HDP-CVD 1. Usually,HDP-CVD,which is a process with low deposition rate and high equipment cost is used to deposit this silicon nitride layer. 在铜大马士革(Damascene)工艺中,为避免由于铜向FSG中扩散所致电迁移的问题,需要在铜表面沉积一层氮化硅作为隔离铜和随后的介电材料的直接接触,通...
fluorinated SiO2glass (FSG), and diamond like carbon or fluorine-doped diamond like carbon (amorphous C:F). It is also known that pores in dielectric materials can lower the dielectric constant. Low-k dielectric materials can typically be deposited ab initio either with or without pores, dependi...
PURPOSE: A method of making an integrated circuit device having a planar interlevel dielectric layer is provided to form a flat inter-level dielectric layer of low k, which comprises an FSG layer of HDP-CVD which protects a conductive la... 마우리알바로,아브델가디어마...
KevinLiu,”NF3 ReductionforRemotePlasmaClean in200mmProducerPE-CVD Applications Chambers”【R]1999 H.J.Leeet ofPlasmaInducedGateOxide in 【2]Steven a1.,“Reduction Damage PETEOS Deposition”.【R】1998 Chanand Li“ANovelFSGProcessfor IMD 【3】LinZhang,DianaZhuang Gap—Fill Application”[R】2000...