这是发表在 顶刊IEEE Transactions on Image Processing,Feb 2019的论文。论文题目为Gated-GAN: Adversarial Gated Networks for Multi-Collection Style Transfer。作者为Xinyuan Chen, Chang Xu , Xiaokang Yan…
To create normally off GaN transistors, the subgate region on the basis of p -GaN doped with magnesium is more often used. However, optimization of the p -GaN epitaxial-layer thickness and doping level makes it possible to achieve a threshold voltage close to V th = +2 V for the on-...
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NiO/AlGaN interface reconstruction and transport manipulation of p-NiO gated AlGaN/GaN HEMTsAuthor: Hui Guo, Hehe Gong, Xinxin Yu, Rui Wang, Qing Cai, Danfeng Pan, Jiandong Ye, Bin Liu, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng单位/Institute: 南京大学电子科学与工程学院 展开更多...
Weak antilocalization was studied in an AlxGa1–xN/GaN two-dimensional electron gas as a function of temperature for various gate voltages. By fitting the weak antilocalization measurements by a theoretical model we found that the spin-orbit scattering length does not vary upon changing the carrie...
University of Electronic Science and Technology of China has developed a gallium nitride-on-silicon (GaN-on-Si) metal-insulator-semiconductor gated hybrid anode diode (MG-HAD) with low onset voltage, on-resistance and reverse current leakage [Qi Zhou et al, IEEE Electron Device Letters, ...
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This study suggests an attention-gated generative adversarial network (DoseGAN) to improve learning, increase model complexity, and reduce network redundancy by focusing on relevant anatomy. DoseGAN was compared to alternative state-of-the-art dose prediction algorithms using heterogeneity index, ...
Charge pumping in Sc~2O~3/GaN gated MOS diodesKim, J.Mehandru, R.Luo, B.Ren, F.Gila, B. P.Onstine, A. H.Abernathy, C. R.Pearton, S. J.Irokawa, Y.ELECTRONICS LETTERS- IEE
Transport in a gated Al0.18Ga0.82N/GaN electron system We have investigated the low-temperature transport properties of front-gatedAl0.18Ga0.82N/GaNheterostructures. At zero gate voltage, the Hall mobility incr... JR Juang,TY Huang,TM Chen,... - 《Journal of Applied Physics》 被引量: 48...