这是发表在 顶刊IEEE Transactions on Image Processing,Feb 2019的论文。论文题目为Gated-GAN: Adversarial Gated Networks for Multi-Collection Style Transfer。作者为Xinyuan Chen, Chang Xu , Xiaokang Yan…
Gated SwitchGAN for multi-domain facial image translationXiaokang ZhangYuanlue ZhuWenting ChenWenshuang LiuLinlin Shen
United States Patent US8482037 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text
This paper focuses on the time-dependent breakdown of the AlGaN/GaN Schottky barrier diodes with a gated edge termination (GET) submitted to high-voltage stress. The impact of the GET structure, the passivation layer thickness, and a preclean process (sulfuric acid and hydrogen peroxide mixture ...
A high-sensitivity pH sensor based on an AlGaN/GaN high-electron mobility transistor (HEMT) with a 10 nm thick Au-gated sensing membrane was investigated. The Au nanolayer as a sensing membrane was deposited by electron-beam evaporation and patterned onto the GaN cap layer, which provides more...
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Spin-orbit coupling is studied using the quantum interference corrections to conductance in AlxGa1−xN∕AlN∕GaN two-dimensional el... ,Kurdak,N.,... - 《Physical Review B》 被引量: 52发表: 2006年 Transport in a gated Al0.18Ga0.82N/GaN electron system We have investigated the low-temp...
This study suggests an attention-gated generative adversarial network (DoseGAN) to improve learning, increase model complexity, and reduce network redundancy by focusing on relevant anatomy. DoseGAN was compared to alternative state-of-the-art dose prediction algorithms using heterogeneity index, ...
Charge pumping in Sc~2O~3/GaN gated MOS diodesKim, J.Mehandru, R.Luo, B.Ren, F.Gila, B. P.Onstine, A. H.Abernathy, C. R.Pearton, S. J.Irokawa, Y.ELECTRONICS LETTERS- IEE
University of Electronic Science and Technology of China has developed a gallium nitride-on-silicon (GaN-on-Si) metal-insulator-semiconductor gated hybrid anode diode (MG-HAD) with low onset voltage, on-resistance and reverse current leakage [Qi Zhou et al, IEEE Electron Device Letters, ...