必应词典为您提供gate-oxidation的释义,网络释义: 栅极氧化;闸极氧化层;闸极氧化设备奖;
Gate oxidation method of the high performance MOS transistor due to the reduction of remote scatteringThis invention MOS transistor structure (200, 210 and 400) with the formation method (300 and 500) is something regarding, it is something where the high permittivity dielectric gate insulator film...
所以后来发展到Wet-RTO,RTO(Rapid Thermal Oxidation)可以在数秒内高温下完成Oxidation,因为时间短所以整个thermal budget是可以接受的,而且温度高(>1000C)的Oxide quality也是可以保障的,同时可以抑制Boron Penetration。而这个Wet-RTO现在业界主流还是用AMAT (Applied Material)公司的ISSG (In-Situ Steam Generation),据...
基于这一理论, Yin等人[27]采用低温氧等离子体退火(oxygen plasma re-oxidation annealing, OP-ROA)的方法来优化SiC/SiO2界面性能, 通过引入单一氧元素退火, 同时改善了SiO2薄膜和SiC/SiO2界面的质量, 提升了SiC MOS电容器的电压稳定性, 使得SiO2的击穿电场增加到12.40 MV/cm, 如图4(a), (b)所示, 提升了器件...
The present invention provides an integrated circuit which comprises a substrate having a plurality of device regions formed therein, said plurality of device regions being electrically isolated from each other by shallow trench isolation (STI) regions and said plurality of device regions each having ...
h,i, Schematic and SEM image of the vertical 2D Bi2O2Se fin arrays synthesized by the oxidation method. Extended Data Fig. 4 Anisotropic epitaxial growth of vertical 2D Bi2O2Se fins. a, Schematic for anisotropic growth of vertical 2D Bi2O2Se fins. b,c, Cross-sectional-view ...
-8-Gate Reoxidation wet clean,SC1+SC2清洗, 然后热氧化15A OX ,在CVD re-oxidation 15A OX,两层OX称为offset spacer 或space0/spacer-1. Offset spacer隔离后面离子注入引起的横向扩散,并增加了LDD注入到gate的距离,减少了overlap capacitor。 -9-NMOS halo implant: 旋涂光阻和TARC(top anti-reflective coa...
-7-氧化生长low temperature radical oxidation (chemical reactions)一层6A的Ox在Fin表面,Bottom interface layer 称为BIL,BIL确保HK和Si之间交界面smooth -8- ALD沉积12A的HfO2,覆盖整个wafer,但fin只有gate区域的Fin暴露出来被覆盖。 -9- ALD沉积1nm金属TiN, PMOS gate TIN作为功函数。
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2. 出入通行证 朝阳科技大学委托研究计画成果报告 -... ... Gate 片门,门票收入Gate pass出入通行证Gear head 齿轮式(摄影机)云台 ... www.5doc.com|基于 1 个网页 3. 出门单 gate-英汉词典-英中字典-速译通-解释意思... ... gate oxidation 栅极氧化gate pass{n.}出门单gate piece 锁块 ... ...