A method for forming transistors having sublithographic features, for example, gates, is disclosed. A patterned hardmask (formed, for example from PETEOS) is created overlying oxide and polysilicon layers. The dimensions of the hardmask are reduced by isotropic etching. The reduced- dimension hard...
(Electronics) a unipolar transistor consisting of three or more electrode regions, the source, one or more gates, and the drain. A current flowing in a channel between the highly doped source and drain is controlled by the electric field arising from a voltage applied between source and gate....
9.(Electronics) the electrode region or regions in a field-effect transistor that is biased to control the conductivity of the channel between the source and drain 10.(Photography) a component in a motion-picture camera or projector that holds each frame flat and momentarily stationary behind the...
A GTO (Gate Turn-Off Thyristor) device model for circuit simulation has been developed and tested. The model is based on the two-transistor model of thyristors and composed of some additional elements such as controlled current sources, ... T Ise,H Ishida,Y Murakami - 《Technology Reports of...
摘要: PURPOSE: To reduce the resistance and parasitic capacitance of a fine gate by irradiating the upper and lower parts of the gate with an electron beam having different intensity of energy.收藏 引用 批量引用 报错 分享 文库来源 求助全文 FORMATION OF GATE FOR FET TRANSISTOR 优质文献 ...
A transistor performance figure-of-merit including the effect of gate resistance and its application to scaling to sub-0.25-/spl mu/m CMOS logic technologies A. Chatterjee,M. Rodder,I. C. Chen.A transistor performance figure-of-merit including the effect of gate resistance and its application ...
The Permeable Junction Base Transistor (PJBT) is a new concept of vertical field effect transistor (v-FET) that has the potential of very high frequency operation. The gate of the new homoepitaxial device consists of heavily p-type doped GaAs and is embedded in nominally undoped layers to red...
A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate oxide layer. In another method, a gate and a gate oxide layer are formed in overlapping relation, ...
Among potential candidates to replace the CMOS transistor channel, several materials such as CNTs, GNRs, and SiNW show an interesting behavior known as "Ambipolarity." Ambipolarity, means that n- and p-type behavior can be observed in the same device. By adding a fourth terminal to control ...
TheGTOblock models a gate turn-off thyristor (GTO). The I-V characteristic of a GTO is such that if the gate-cathode voltage exceeds the specified gate trigger voltage, the GTO turns on. If the gate-cathode voltage falls below the specified gate turn-off voltage value, or if the load ...