StarRC, an integral part of the Synopsys Design Platform signoff solution, is the trusted market leader and industry gold standard for gate-level and transistor-level parasitic extraction. Providing extraction solutions for applications ranging from 100+ million instance digital system-on-chip (SoC) ...
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Intel made a significant breakthrough in the 45nm process by using a "high-k" (Hi-k) material called hafnium to replace the transistor's silicon dioxide gate dielectric, and by using new metals to replace theN and PMOS polysilicon gate electrodes. These new materials (along with the right ...
low gate leakage23,24. These merits make them suitable for backend-of-line (BEOL) integration as memory drivers in memory-centric computing cells or high-performance thin-film transistor (TFT)-based BEOL logic circuitries (Fig.1a)7,25. With the increasing interest to realize new computing arch...
4c. When the transistor is turned on and VGS is higher than VCG, the voltage difference between VCG and VGS leads to charge injection in the junction between the channel and the control gate. Consequently, the Fermi level in the junction depletion region becomes bend, resulting in the charge...
The NOR gate is illustrated as a circuit element is illustrated too in Figure F5.2. This little two-transistor circuit is the basis for all decision making in digital circuits. No matter how powerful the computer or how smart the behaviour, at a circuit level all decisions are broken down ...
STEP 12: Connect Transistor Nodes to Match Schematic and Form the Inverter• Select poly layer from the LSW. • Draw a rectangle to connect the poly gate inputs of nMOS and pMOS transistors. Note: To connect polygons of the same layer (eg., poly) you simply need to add another poly...
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