EiceDRIVER™ gate driver IC technologies Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with both silicon and wide-bandgap power devices like MOSFETs, discrete IGBTs, IGBT modules, SiC MO...
New Gate Driver IC for 1200V Power Devices The RAJ2930004AGM can be used together withRenesasIGBTs as well as with IGBTs and SiC MOSFETs from other manufacturers. In addition to traction inverters, the gate driver IC is ideal for a wide range of applications that use power semiconductors, s...
EiceDRIVER™ gate driver IC technologies Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with both silicon and wide-bandgap power devices like MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFET...
2. Smart Gate Driver IC Design Examples Recent trend in gate driver design includes many intelligent features such as on-chip CPU for dynamic control, flexible gate voltage levels, multi-stage driving speed for slew-rate control, precise timing control, current sensing capability for close-loop re...
A gate driver is a type of power amplifier that accepts a low-power input from a controller IC and produces a high-current drive input for the gate of a high-power transistor such as an Insulated-Gate Bipolar Transistor (IGBT) or power MOSFET. Gate drivers are beneficial to MOSFET operatio...
4 A dual gate driver for SiC MOSFET which provides galvanic isolation between each gate driving channel STDRIVE601 带有三重半桥栅极驱动器的单晶片,面向N沟道功率MOSFET或IGBT(适合于三相应用) STDRIVEG600 电流能力高、传输延迟短且安全的GaN FET半桥栅极驱动器 ...
A gate driver is a type of power amplifier that accepts a low-power input from a controller IC and produces a high-current drive input for the gate of a high-power transistor such as an Insulated-Gate Bipolar Transistor (IGBT) or power MOSFET. Gate drivers are beneficial to MOSFET operatio...
4 A dual gate driver for SiC MOSFET which provides galvanic isolation between each gate driving channel STDRIVE601 带有三重半桥栅极驱动器的单晶片,面向N沟道功率MOSFET或IGBT(适合于三相应用) STDRIVEG600 电流能力高、传输延迟短且安全的GaN FET半桥栅极驱动器 STGAP2SiCS Galvanic isolated 4 A singl...
Motto,Eric.Hybrid ICIGBT gate driver integrates DC/DC converter.Power Electronics Technology. 2010Motto E.Hybrid ICIGBT gate driver integrates DC/DC converter[J].Power Electronics Technology,2010,36(6):21-22.Hybrid ICIGBT gate driver integrates DC/DC converter. Motto,Eric. Power Electronics ...
激励器数量 2 Driver 输出端数量 2 Output 输出电流 350 mA 电源电压-最小 10 V 电源电压-最大 20 V 上升时间 220 ns 下降时间 80 ns 最小工作温度 - 40 C 最大工作温度 + 125 C 特点 Independent 高度 1.5 mm 长度 5 mm 宽度 4 mm 逻辑类型 CMOS, TTL 传播延迟—最大值 ...