Finally, summarizes the Picasso in design and welding problems and solutions. The project reaches IGBT drive function and has various protection function. KEY WORDS:IGBT ,Driving circuit,HCPL-316j,Gate drive,Protection circuit 第 1.1 1.1.1 电力电子技术包括功率半导体器件与IC技术、功率变换技术及控制...
Finally, summarizes the Picasso in design and welding problems and solutions.The project reaches IGBT drive function and has various protection function.KEY WORDS :IGBT ,Driving circuit,HCPL-316j,Gate drive,Protection circuit目 录第1章 概述11.1功率半导体技术的发展11.1 6、.1 电力电子器件的发展11.1....
[22] LASKA T,MILLER G,PFAFFENLEHNER M,et al.Short circuit properties of Trench-/Field-Stop-IGBTs-design aspects for a superior robustness[C].ISPSD′03.2003 IEEE 15th International Symposium on Power Semicon-ductor Devices and ICs,2003.Proceedings.,Cambridge,UK,2003:152-155. [23] LEFEBVRE S,...
insulated gate bipolar transistorsdriver circuitspower integrated circuitsIn recent years, power electronics technology has been widely used in power systems. IGBT is the most fundamental and core element of high-power power electronics technology, and the driving circuit is the "booster" to maximize ...
This paper studies the IGBT drive in after FF600R06ME3, mainly for thedesign of IGBT driving circuit.This paperthe more specific researchhow to chooseoneIGBT driver. Key words: IGBT;drive;protection 1 近年来,随着我国经济的持续快速发展,能源消耗日趋紧张,节约能源是我国的基本国策。据报道,全球的电...
TI的Fundamentals of MOSFET and IGBT Gate Driver Circuits,Infineon的Gate drive for power MOSFETs in switching applications,TOSHIBA的MOSFET Gate Drive Circuit。 关注“功率器件显微镜”公众号,发送“31”获取31篇甄选笔记 第二大类技术文档详细讲解了自举电路的原理、设计方法、应用要点。IR的Bootstrap Network ...
We expect that, after attending this short course, the audience will obtain a useful insight on basic gate driver requirements and gain exposure to future design trends in smart gate driver ICs. 注册费用 1.线下参训 Standard:6200元/人;
1、IGBT Gate Driver Calculation,Gate Driver Requirement,What is the most important requirement for an IGBT driver ?,Gate Peak current,Conditions for a safety operation,Which gate driver is suitable for the module SKM 200 GB 128D ?,Design parameters: fsw = 10 kHz Rg = ?,reverse recovery ...
Circuit inductances should always be minimised by keeping conductors and trace lengths as short as possible. However, by using an isolated gate driver for each transistor, the driver ground can be connected directly to the transistor emitter thereby eliminating the effects of layout inductances. The...
[12] Luniewski P, “Unsymmetrical gate voltage drive for high power 1200V IGBT4 modules based on coreless transformer technology driver,” EPE-PEMC-2008, 2008,pp. 88-96. [13] L. Dulau, S. Pontarollo, A. Boimond, et al, “A New Gate Driver Integrated Circuit for IGBT Devices with...