In IBM’s gate-all-around fabrication process, two landing pads are formed on a substrate. The nanowires are formed and suspended horizontally on the landing pads. Then, vertical gates are patterned over the suspended nanowires. In doing so, multiple gates are formed over a common suspended reg...
in Gate-All-Around, the gate is wrapped around all sides of the channel material, as described in Figure 2. The large footprint of the gate over the channel enables better electrostatic control than FinFET, improved density, reduced the effect of a short ...
FABRICATION OF PERFECTLY SYMMETRIC GATE-ALL-AROUND FET ON SUSPENDED NANOWIRE USING INTERFACE INTERACTIONA semiconductor device including a plurality of suspended nanowires and a gate structure present on a channel region portion of the plurality of suspended nanowires. The gate structure has a uniform ...
GRENOBLE, France, June 15, 2020 – CEA-Leti has demonstrated the fabrication of a new gate-all-around (GAA) nanosheet device as an alternative to FinFET technology targeting high-performance (HPC) applications such as smartphones, laptops, and mobile systems with data collection and processing ...
来源期刊 IEEE Transactions on Nanotechnology 研究点推荐 Gate-All-Around Vertically Stacked Silicon Nanowire FETs Top–Down Fabrication Controllable Polarity novel ambipolar Silicon nanowire (SiNW) Schottky-barrier (SB) FET transistors 引用走势 2016 被引量:7 站内活动 0关于...
Ultra-scaled transistors are of interest in the development of next-generation electronic devices1–3. Although atomically thin molybdenum disulfide (MoS2) transistors have been reported4, the fabrication of devices with gate lengths below 1 nm has be
“data fabrication” based on simply false truth. If they (or he/she) really believe their claims are based on hard science, they should submit these evidence directly to the IEEE Editorial Office or appropriate institutions for formal investigation, rather than posting anonymous allegations online....
The finFET device 100 includes a substrate 102, a fin-element 104 extending from the substrate 102, isolation regions 106, and a gate structure 108 disposed on and around the fin-element 104. The substrate 102 may be a semiconductor substrate such as a silicon substrate. The substrate may ...
SiGe/Si multilayer is the core structure of the active area of gate-all-around field-effect transistors and semiconductor quantum computing devices. In thi... Z Kong,Y Song,H Wang - 《Acs Applied Materials & Interfaces》 被引量: 0发表: 2023年 Hybrid integrated Si nanosheet GAA-FET and sta...
We have focused on the FinFET type double gate transistor because of its straightforward fabrication emanating from a planar device process flow. For the ... J KRETZ - 《Microelectronic Engineering》 被引量: 11发表: 2004年 N-channel and P-channel end-to-end finFET cell architecture with rela...