Heteroepitaxial growth of 2% lattice-mismatched EuTe on PbTe(111) by molecular beam epitaxy is investigated in the two-dimensional layer-by-layer growth regime (Frank van der Merwe growth mode) combining scanning tunnelling microscopy and in-situ reflection high-energy electron diffraction. The ...
Different growth mechanisms of van der Waals heteroepitaxial 2D Bi2Te3/Sb2Te3 stacking by choosing different substrates are reported. Sequential Bi2Te3/Sb2Te3 stacking growth mode becomes layer-by-layer growth on h-BN substrates, and 3D island growth on SiO2/Si. Compressive strain in the h-BN...
Comprehensive overview on elastic strain relaxation mechanisms in nitride heterostructures: Stranski-Krastanow versus Frank-Van der Merwe growth modeIII-V semiconductorsmolecular, atomic, ion, and chemical beam epitaxyBoth plastic and elastic strain relaxation of GaN ...
On the Si(111)-(7 x 7) surface Ph grows in the Stranski-Krastanov mode, on the Si(111)-(root3 x root3)R30 degrees -Au and on the Si(111)-(6 x 6)-Au surface in the quasi-Frank-van der Merwe (layer-by-layer) mode. On the Si(111)-(root3 x root3)R30 degrees -Ag ...