Heteroepitaxial growth of 2% lattice-mismatched EuTe on PbTe(111) by molecular beam epitaxy is investigated in the two-dimensional layer-by-layer growth regime (Frank van der Merwe growth mode) combining scanning tunnelling microscopy and in-situ reflection high-energy electron diffraction. The ...
Different growth mechanisms of van der Waals heteroepitaxial 2D Bi2Te3/Sb2Te3 stacking by choosing different substrates are reported. Sequential Bi2Te3/Sb2Te3 stacking growth mode becomes layer-by-layer growth on h-BN substrates, and 3D island growth on SiO2/Si. Compressive strain in the h-BN...
Underlined by these examples, it is shown that the precise control of an epitaxially coherent, or two-dimensional layer-by-layer growth, named after Jan van der Merwe, is a prerequisite to achieve the desired functionality of oxide-oxide and oxide-nitride superlattices....
Comprehensive overview on elastic strain relaxation mechanisms in nitride heterostructures: Stranski-Krastanow versus Frank-Van der Merwe growth modeIII-V semiconductorsmolecular, atomic, ion, and chemical beam epitaxyBoth plastic and elastic strain relaxation of GaN ...
T. Schmidt, E. Bauer, Interfactant‐mediated quasi‐Frank-van der Merwe growth of Pb on Si(111), Physical Review B, 62 (2000) 15815‐15825.T. Schmidt, E. Bauer, Interfactant-mediated quasi-Frank-van der Merwe growth of Pb on Si(111), Physical...