In this letter, flexible double-gate (DG) thin-film transistors (TFTs) based on InGaZnO4 and fabricated on free standing plastic foil, using self-alignment (SA) are presented. The usage of transparent indium-tin-oxide instead of opaque metals enables SA of source-, drain-, and top-gate ...
We present a 350°C self-aligned dual-gate a-IGZO backplane technology with a monolithically integrated multi-layer high-temperature thin-film barrier for flexible AMOLED. Thin-film barrier properties and TFT technology are optimized on 320 × 352mm substrates, and demonstrated in a flexible QQVGA...
at the cost of static power consumption. A two-input NOR gate uses three transistors for the depletion-load nMOS logic style, six n-type IGZO transistors for the pseudo-CMOS implementation and four LTPS complementary transistors. IGZO or unipolar TFT technologies could also benefit from...
The ionic-gel connects the drain and the gate, and the ionic-gel gate capacitance under the double capacitance effect is large (7.9 μF cm−2), which ensures that the graphene FET works at a low gate voltage of less than 2 V. Between the source and drain electrodes, the ...
Different from traditional rigid sensors based on silicon substrates, flexible sensors are suitable for irregularly shaped surfaces and complex measurement
[45]. SWCNT networks with low density are used as the channel of the TFT, while more printing runs lead to a higher nanotube density which can be used as the contacts. They also proposed the utility of ionic liquid as gate dielectric layer to enable the top-gate operation. However, ...
Steudel, "20.1: Flexible AMOLED Display and Gate-driver with Self-aligned IGZO TFT on Plastic Foil," in SID Symposium Digest of Technical Papers, vol. 45, no. 1. SID, 2014, pp. 248-251.M. Nag et al., "Flexible AMOLED display and gate-driver with self- aligned IGZO TFT on plastic...
Steudel, "20.1: Flexible AMOLED Display and Gate-driver with Self-aligned IGZO TFT on Plastic Foil," in SID Symposium Digest of Technical Papers, vol. 45, no. 1. SID, 2014, pp. 248-251.Nag, M.; Obata, K.; Fukui, Y.; Myny, K.; Schols, S.; Vicca, P.; Ke, T.H.; Smout...
This paper presents two Cherry-Hooper amplifiers for bendable analog radio-frequency electronic systems fabricated in flexible self-aligned amorphous indium gallium zinc oxide (a-IGZO) thin-film-transistor (TFT) technology. The first circuit is a wideband single-stage Cherry-Hooper amplifier providing ...
a-IGZOFlexible electronicsThis paper presents two high-gain amplifiers fabricated in a flexible self-aligned amorphous indium gallium zinc oxide thin-film transistor (TFT) technology. One common-source amplifier relies on positive feedback to provide a voltage gain of 17 dB, and a bandwidth of 79...