Lastly, the new pixel circuit and layout based on a synchronized DG a-IGZO TFT is introduced.doi:10.1889/JSID20.5.237Gwanghyeon BaekJerzy KanickiJohn Wiley & Sons, LtdJournal of the Society for Information DisplayModeling of current-voltage characteristics for double-gate a-IGZO TFTs and its ...
double-gatea-IGZOTFTsself-alignedtop-gatestabilityIn this paper, the electrical characteristics and stability of double‐gate (DG) a‐IGZO TFTs with self‐aligned top‐gate are investigated. The stability of DG TFTs deteriorated as the a‐IGZO layer thickness decreased from 40nm to 20nm, and...
In this letter, we investigated the structural and electrical characteristics of high-κEr2O3and Er2TiO5gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3dielectric, the a-IGZO TFT device incorporating an Er2TiO5...
used the vapor-liquid-solid method to grow the ZnO nanowire as the channel of the PT, which shows cutoff wavelength of 360 nm and high responsivity of 4.7 × 104 A/W [16]. Lee et al. deposited the InGaZnO/InZnO double layer as the channel layer of the PT by the sputter. Their PT...
A-IGZO TFTsSelf-aligned top-gateStabilityIn this paper, the electrical characteristics and stability of double-gate (DG) a-IGZO TFTs with self-aligned top-gate are investigated. The stability of DG TFTs deteriorated as the a-IGZO layer thickness decreased from 40nm to 20nm, and an abnormal...
The drain current was larger than expectedfrom the GI capacitance ratio to single‐gate FETs. Device simulation results suggest that shallow trap states and increase in electron mobility by self‐heating of FETs can explain the large drain current.Honda, Ryunosuke...
Double-gateDual-gateThin-film transistor (TFT)When the top-gate and bottom-gate of a dual-gate amorphous-InGaZnO_4 (a-IGZO) thin-film transistor (TFT) are electrically tied together (dual-gate driving), drain current (I_(DS)) increases fivefold compared to single-gate driving (i.e. ...
double‐gatedual‐gatethin‐film transistor (TFTWhen the top‐gate and bottom‐gate of a dual‐gate amorphous‐InGaZnO4 (a‐IGZO) thin‐film transistor (TFT) are electrically tied together (dual‐gate driving), drain current (IDS)increases fivefold compared to single‐gate driving (i.e. when...
double-gatea-IGZO TFTsself-aligned top-gatestabilityIn this paper, the electrical characteristics and stability of doubleゞate (DG) a㊣GZO TFTs with self゛ligned topゞate are investigated. The stability of DG TFTs deteriorated as the a㊣GZO layer thickness decreased from 40nm to 20nm, and...
double‐gatedual‐gatethin‐film transistor (TFT)When the top-gate and bottom-gate of a dual-gate amorphous-InGaZnO4 (a-IGZO) thin-film transistor (TFT) are electrically tied together (dual-gate driving), drain current (IDS) increases fivefold compared to single-gate driving (i.e. when ...