In this work, we studied the behavior of flatband voltage (V-fb) instability in 4H-SiC MOS capacitors under various BTSs from low temperature (LT) to high temperature (HT) considering the combined effects of interfacial traps and mobile ions. Results showed that nitrogen and nitrogen-hydrogen...
Photo-voltage induced by capture of photo-carriers by surface traps Surface photo-voltage on silicon under flat band conditions. V. M. Buimistrov,A. P. Gorban and V. G. Litovchenko. Surface Science . 1965V. M. Buimistrov , A. P. Gorban and V. G. Litovchenko Surface Sci. ...