Wendell P. NobleLeonard Forbesultra high density flash memory,'' in VLSI Technology, 2007 IEEE Sympo-
2 NAND overview: from memory to systems 2.1 简介 2.2 NAND 存储器 2.2.1 阵列(Array) 2.2.2 基本操作 2.2.3 逻辑架构 2.2.4 引出线(Pinout) 2.3 指令集 2.3.1 读取操作 2.3.2 编程操作 2.3.3 擦除操作 2.3.4 同步操作 2.4 基于NAND的系统 2.4.1 内存控制器 2.4.2 多Die系统 2.4.4 3D存储和...
As mentioned above in the previous chapter, the address information is fed into the memory chip through an 8-bit interface; therefore, the address is divided into bytes. Currently the address sequence is up to 5 bytes (cycles) long, they are always ordered from the least to the most signif...
As mentioned above in the previous chapter, the address information is fed into the memory chip through an 8-bit interface; therefore, the address is divided into bytes. Currently the address sequence is up to 5 bytes (cycles) long, they are always ordered from the least to the most signif...
NAND flash memory cells are organized in an array->block->page hierarchy, as illustrated in Fig. 1., where one NAND flash memory array is partitioned into many blocks, and each block contains a certain number of pages. Within one block, each memory cell string typically contains 16 to 64...
而且功耗可以降低 40%以上;(4)固态盘开始逐步替代机械硬盘;(5)在企业级应用中,采用Flash作为硬件加速卡来构建融合存储系统;(6)针对要求高并发、低延迟的企业级应用,以英特尔公司为首的工作组于2010年发布了专用于PCIe固态存储系统的NVMe(Non-volatile Memory Express)协议标...
by Crystalline ZrTiO4 Charge-Trapping Layer Yung-Shao Shen, Kuen-Yi Chen, Po-Chun Chen, Teng-Chuan Chen &Yung-Hsien Wu Crystalline ZrTiO4 (ZTO) in orthorhombic phase with different plasma treatments was explored as the charge-trapping layer for low-voltage operation flash memory. ...
Tanaka et al., “Bit Cost Scalable Technology with Punch and Plug Process for Ultra High Density Flash Memory,” VLSI Technology, 2007 IEEE Symposium on Jun. 12-14, 2007, pp. 14-15. **Copy Submitted in Parent Application So Not Included Here, MPEP 609 and 37 C.F.R. 1.98(d)(1)*...
A semiconductor device having and electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and dispos
A flash memory includes an array of memory cells having sources, drains, floating gates, and control gates. The array includes a conductive plate formed over the memory cells to affect a capacitive co