A 14 nm FinFET structure has been considered to study the impact of metal-gate work-function variability by using the 3-D device and mixed mode circuit simulation. The present work investigates the impact of work function variability (WFV) on electrical characteristics of various possible FinFET...
Due to its many superior attributes, especially in the areas of performance, leakage power, intra-die variability, low voltage operation (translates to lower dynamic power), and significantly lower retention voltage for SRAMs, FinFETs are replacing planar CMOS as the device of choice. ...
the gate structure is placed on the sides or wrapped around the fin. The advantage of this architecture is that the gate wraps around the vertical channel and conduction occurs on three sides as
structure, when viewed, looks like a set of fins. The thickness of the device determines the channel length of the device. The channel length of a MOSFET is said to be the distance between the source and drain junctions. It is a non-planar, double gate transistor which based either on ...
五分钟让你看懂FinFET Gate 打开这一年来半导体最热门的新闻,大概就属FinFET 了,例如:iPhone6s 内新一代A9应用处理器采用新电晶体架构很可能为鳍式电晶体(FinFET),代表FinFET开始全面攻占手机处理器、三星与台积电较劲,将10纳米FinFET正 式纳入开发蓝图、联电携ARM,完成14纳米FinFET制程测试。到底什么是 FinFET它...
The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the ...
concepts such as FinFET15, junctionless FET16, or unipolar nanowire FET17, developed in the silicon industry to create a fin or nanowire-type structure with the gate wrapping around the channel, provide much better channel control, especially for short-channel devices required for RF operation. ...
desired pattern onto the wafer, then parts of that pattern are etched to define gate and to expose locations that will become the source and drain. Next, ions (such as boron or phosphorous) are implanted into the source and drain areas. This device structure is also known as “planar gate...
1.A FinFET structure, comprising:a plurality of fins;a gate, disposed substantially orthogonal over the plurality of fins, covering a portion of a top surface and a portion of sidewalls of the plurality of fins;a first dopant layer, covering the top surface and the sidewalls of a junction...
11.The semiconductor device of claim 8 wherein:the first fin portion includes a first channel;the second fin portion includes a second channel;the movement of carriers in the first channel and in the second channel during operation is generally horizontal in direction. ...