22nm Gate Last FinFET Process Flow介绍.pdf 文件大小:16.73 MB 下载次数:36 附件售价:1RD币 22nm...
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FIGS. 4a-4fcollectively illustrate a process flow for forming the embodiment FinFET of FIG. 3; and FIG. 5 is a method of forming the embodiment FinFET of FIG. 3. Corresponding numerals and symbols in the different figures refer to corresponding parts unless otherwise indicated. The figures ar...
However, current process for fabricating FinFETs is still insufficient in producing products with satisfactory performance. Hence, how to improve the current process flow for producing FinFETs with enhanced performance has become an important task in this field. ...
最近有点时间,根据网上的资料。来梳理下22nm Finfet process 介绍,总体来说,Finfet的结构类似,14nm同理。 1.一般选择<100>重掺杂的P+,0.01Ω-cm 的Si衬底。进产线前一般都会长大概~1um的外延层(EPI WAFER). 2.用piranha+HF+SC1+SC2,清除wafer表面,去除有机物,particle及金属离子,native oxide。
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联华电子14nmFinFET进入客户芯片量产阶段.pdf 上传者:u013883025时间:2021-07-26 半导体制造产业发展策略报告.pptx 半导体制造产业发展策略报告.pptx 上传者:njbaige时间:2021-09-30 22nm+FinFET+Process+Flow.pdf 22nm+FinFET+Process+Flow.pdf 上传者:qq_38810151时间:2024-09-17 ...
SOI FinFET has a simple flow process. In this process, engraving of the fin is stopped on the buried oxide layer of the wafer. Height of the fin depends on the thickness of the SOI. Separating the neighboring devices, because of the buried oxide layer, is done inherently. Thus no ...
Referring to FIG. 2, silicon germanium (SiGe) layer22and semiconductor stack24are formed over substrate20through epitaxy. The respective step is shown as step304in the process flow shown in FIG. 22. Accordingly, SiGe layer22and semiconductor stack24form crystalline layers. In accordance with some...
Block 1004 forms a dielectric layer 302 between and around the fins 104 using a flowable oxide process that may include, e.g., silicon dioxide.Block 1006 conformally forms a dielectric spacer 402 over the fins 104 with a material such as, e.g., silicon dioxide. Block 1008 then ...