To obtain the subthreshold current model for NC-JL FinFET the drift diffusion equation is solved by including negative capacitance effect through LK equation and further utilized to attain the expression of subthreshold slope (SS). The influence of the fringing field due to source/drain spacer on...
VDS= Drain to Source voltage. If we apply a negative voltage, a hole channel will be formed under the oxide layer. Now, the controlling of source to gatevoltageis responsible for the conduction ofcurrentbetween source and the drain. If the gatevoltageexceeds a given value, only then does t...
Although perhaps obvious, selecting a representative testbench for the fresh simulation is crucial. The aging models will extrapolate these simulation results using an integral equation over the product lifetime of T years (with a fractional exponent for time in the integral, as indicated by the lo...
Drain current is under the control of a gate voltage that modulates the conductivity of the underlying fin or nanowire. This tutorial derives qualitative I-V characteristics for such devices, using intuitive assumptions and principles like Ohm’s law and Poisson’s equation. It then focuses on ...
We at first use the Gaussian quadrature method to integrate Landauer's equation for tunneling current computation without further approximations. To boost simulation speed, some approximations are made. The simplified equation shows a good accuracy and has more flexibility for compact model purpose. The...
In this paper, the threshold voltage roll-off and drain induced barrier lowering(DIBL) have been analyzed for nano structure double gate FinFET. The analytical current model has been developed, including thermionic current and tunneling current models. The potential distribution by Poisson equation and...
The finite element simulation basing on the commercial software COMSOL Multiphysics29was performed, where semiconductor module basing on Maxwells equation, Boltzmann transport theory together with Neumann boundary conditions were emplied30,31,32. Three-dimensional model of FinFET (Fig.4a) was built with...
An analytical and scalable model for the subthreshold swing and the threshold voltage in FinFETs has been developed by solving the 3-D Poisson equation usi... H.A. El Hamid,J Roig,V Kilchytska,... - Nano Science & Technology Institute Nanotechnology Conference & Trade Show Vol3 Santa Clara...
A precise drain current is obtained by adding quantum mechanical effect (QME) which also improves the efficiency of the model. The drain conductance, transconductance and subthreshold swing (SS) are derived from the drain current equation. To study the performance of the device, two dielectric ...
This article proposed an analytical model for GIDL current in negative capacitance junctionless FinFET (NC-JL FinFET). This model is based on tunneling mechanism and the impact of the negative capacitance is taken into consideration through LK equation. Further, the influence of various physical ...