Drain current modelA potential-based drain current model is presented for nanoscale undoped-body symmetric double gate MOSFETs. It is based on a fully coherent physical description and consists of a single analytic equation that includes both drift and diffusion contributions. The derivation is ...
Derivation of the Drain Current The drain current is could be rms or dc level. The exact value is dependent to the actual circuit. For a MOSFET functioning as a switch, the drain current is can be derived as supply voltage divided by the total resistance in series to the MOSFET. For MOS...
This results in an analytical estimation of the potential solutions to excessive gate leakage current. The energy quantization analysis involves the derivation of a quantum mechanical charge distribution model by solving the coupled Poisson and Schroinger equations. Based on the newly developed charge ...
CHAPTER 2: Physics-Based Derivation of I-V Model The development of BSIM3v3 is based on Poisson's equation using gradual channel approximation and coherent quasi 2D analysis, taking into account the effects of device geometry and process parameters. BSIM3v3.2.2 considers the following physical ...
(4) By considering an output current , an ideal resonant tank (i.e., high-quality Q-factor of the resonant tank) and converter switching at the resonant frquency, the output current peak, as shown in Figure 5, ca...
http://www.irf.com/technical-info/appnotes/mosfet.pdf Discrete power MOSFETs employ semiconductor processing techniques that are Source Contact Field Gate Gate Drain Oxide Oxide Metallization Contact similar to those of today's VLSI circuits, although the device geometry, voltage and current levels ...
The key feature of this model is analytical solution of current continuity equation and the introduction and derivation in explicit form of the control parameter having a physical sense the ratio of diffusion component of total drain current to its drift current component. Compact closed-form ...
BSIM3v3.2.2MOSFETModelUsers’ManualWeidongLiu,XiaodongJin,JamesChen,Min-ChieJeng,ZhihongLiu,YuhuaCheng,KaiChen,MansunChan,KelvinHui,Ji..