SEM cross section of the general device structure, metals, dielectrics, and detail of the FEOL structures Related AnalysisManufacturerAnalysis TypeSubscription Channel Qualcomm Snapdragon 888 A78 CPU SoC Design AnalysisQualcommProcessLogic - SoC Design Analysis, Logic - SoC Design Analysis (IP) ...
TEM and SEM cross section of the general device structure, back end of line (BEOL) (metals, dielectrics) and front end of line (FEOL) structures The results of TEM-EDS and EELS analyses are included in the ACE summary document. The ACE deliverable provides timely competitive benchmarking info...
一种CMOS兼容硅衬底上的III-V族化合物材料生长方法 体硅FinFET器件单粒子瞬态若干关键影响因素研究 硅衬底上PZT薄膜的制备及其特性分析 硅衬底的制造方法、硅衬底及太阳能电池 硅衬底的制备. 衬底电阻对CMOS电路影响分析 硅衬底上algan_gan异质结材料的生长研究 -》在镜面抛光的硅衬底上沉积金刚石薄膜 硅基衬底的加...
设计基于FinFET工艺的电路说明书
1(a). Fig. 1(b) is the cross-section of the device channel, showing the gate metal and gate dielectric wrapping around the fin channel. The whole device is built upon a semi-insulating diamond substrate to reduce substrate leakage. With negative gate bias, the diamond valence band is ...
A cross-section sketch to illustrate the sample layout is shown in Fig. 1(b). As can be observed, the sample consists of fin structures parallel to each other. The MEIS technique can obtain structural and compositional information of this fin array with nanometric spatial resolution and high ...
Based on well calibrated device model generated, it is shown that FinFETs with high channel stop doping concentration, large fin width and tapered fin cross-section shape exhibit great TID immunity. Further gamma radiation simulation illustrates the evolution of trapped holes in shallow trench ...
(CMOS)bulk Fin FET technology.The competition of charge collection between well boundary and sensitive nodes,the enhanced restoring currents and the change of bipolar effect are responsible for the decrease of SEU cross section.Unlike dualinterlock cell(DICE)design,this approach is more effective ...
TEM and SEM cross section of the general device structure, back end of line (BEOL) (metals, dielectrics) and front end of line (FEOL) structures The results of TEM-EDS and EELS analyses are included in the ACE summary document. The ACE deliverable provides timely competitive benchmarking info...
To overcome these limitations, we recently demonstrated a new device, diamond FinFET3, by leveraging the latest device concept in the silicon CMOS industry. Diamond fin structure enables the device to operate in accumulation or depletion modes without hydrogen termination. The previous work was built...