1,181,324. Field-effect transistor circuits. INTERNATIONAL BUSINESS MACHINES CORP. 24 June, 1968 [14 July, 1967], No. 30083/68. Heading H3T. [Also in Divisions G4, and H1] In a field-effect transistor memory, each cell comprises a charge storage device charged through a field-effect ...
A method for generating a non-volatile memory device may comprise: applying plasma for a preset time period to an exposed surface of a channel of a field effect transistor such that a plurality of charge-trapping sites are formed at the channel. The channel is comprised of a multi-layer ...
A field effect transistor memory cell has a source region, a drain region, a channel region and a gate region, with the channel region extending from the source region to the drain region and being formed from at least one nanowire which has at least one defect such that charges can be ...
device is incorporated for each memory cell. However, this inclusion raises concerns about scalability, energy overhead, and process complexity, potentially offsetting the intrinsic benefits of NVMs’ compactness. Thus, it is imperative to develop selector-less memory cells to harness their true potent...
A fin field effect transistor memory cell having a first and a second source/drain region, a gate region, a semiconductor fin having a channel region between the first and the second source/drain region, a charge storage layer configured as a trapping layer arranged at least partly on the ga...
Writing Disturbance-Free of a Ferroelectric Gate Field-Effect Transistor Memory with an Intermediate Electrode Ferroelectric gate field-effect transistor memory (F-FET) is well known as one of the ultimate nonvolatile memories because of its remarkable features such... S Horita,B Nguyen 被引量: 0...
Here, we report the synthesis of a novel photosensitive polymer electret material, spiropyran, containing poly(3,5-benzoic acid hexafluoroisopropylidene diphthalimide) (6FDA-DBA-SP), and the development of light-responsive flexible memory devices using the 6FDA-DBA-SP electret layer. The charge ...
Memory using tunneling field effect transistors A memory includes a first tunneling field effect transistor including a first drain and a first source, the first drain coupled to a first resistive memory element. The memory includes a second tunneling field effect transistor including... T Nirschl ...
The 65nm tunneling field effect transistor (TFET) 0.68μm2 6T memory cell and multi-Vth device65nm 隧道场效应晶体管(TFET)用于 0.68μm2 6T 存储单元和多阈值电压器件 摘要: 隧道场效应晶体管(TFET)的制作是通过标准的 65nm CMOS 工艺流程。 这个 短窄的 TFET 提供了一个 550μA/μm的电流(与参考...
In principle, a memory field-effect transistor (FET) based on the metal-ferroelectric-semiconductor gate stack could be the building block of an ideal memory technology that offers random access, high speed, low power, high density and nonvolatility. In practice, however, so far none of the ...