1,181,324. Field-effect transistor circuits. INTERNATIONAL BUSINESS MACHINES CORP. 24 June, 1968 [14 July, 1967], No. 30083/68. Heading H3T. [Also in Divisions G4, and H1] In a field-effect transistor memory, each cell comprises a charge storage device charged through a field-effect ...
A method for generating a non-volatile memory device may comprise: applying plasma for a preset time period to an exposed surface of a channel of a field effect transistor such that a plurality of charge-trapping sites are formed at the channel. The channel is comprised of a multi-layer ...
The meaning of FIELD-EFFECT TRANSISTOR is a transistor in which the output current is controlled by a variable electric field.
A fin field effect transistor memory cell having a first and a second source/drain region, a gate region, a semiconductor fin having a channel region between the first and the second source/drain region, a charge storage layer configured as a trapping layer arranged at least partly on the ga...
www.nature.com/scientificreports OPEN received: 30 May 2015 accepted: 29 September 2015 Published: 20 October 2015 Highly photosensitive graphene field-effect transistor with optical memory function Shohei Ishida1, Yuki Anno1, Masato Takeuchi2, Masaya Matsuoka2, Kuniharu Takei1, Takayuki...
必应词典为您提供field-effect-Transistor的释义,na. 【无线】场效果晶体管; 网络释义: 场效应晶体管;场效电晶体;场效应管;
This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate machine learning (ML) workloads. We conducted an exploration of device fabri
摘要: PROBLEM TO BE SOLVED: To provide a phase change memory that is mentioned as a kind of a resistive memory and uses a phase change material for a resistive memory element.收藏 引用 批量引用 报错 分享 文库来源 其他来源 求助全文 MEMORY USING TUNNELING FIELD EFFECT TRANSISTOR 优质文献 ...
To achieve disturb-free writing, we proposed a new writing operation for ferroelectric-gate field-effect transistor memories with intermediate electrodes. The writing voltages VW applied to the wordlines for Pr+ and Pr0 memory states are the same pulse magnitudes, which consist of VW + followed by...
memory integrated circuit chips and are projected to widen this dominance. At the outset, two distinct types of field effect transistor must be distinguished. The first and most important is themetal oxide semiconductor(MOS) type, where the metal (M)gate electrodeis separated from the ...