HfO2-based materials. Here we demonstrate that stable and enhanced polarization can be achieved in epitaxial HfO2films with a high degree of structural order (crystallinity). An out-of-plane polarization value o
These results, with the analyses of structural characterizations, demonstrate the orientation control of phase transitions and ferroelectricity in Al-doped HfO2 thin films.doi:10.1016/j.matchar.2021.111114Hei Man YeuXinxin ChenChi Man WongDeyang Chen...
Intrinsic ferroelectricity in Y-doped HfO2 thin films 下载积分: 500 内容提示: Articleshttps://doi.org/10.1038/s41563-022-01282-61 Department of Physics and Astronomy, University of Nebraska–Lincoln, Lincoln, NE, USA. 2 Department of Mechanical and Materials Engineering, University of Nebraska–...
In 2011, Böscke observed ferroelectric behavior in SiO2-doped HfO2 thin film [535]. Since then, HfO2 and its analog ZrO2 have received a flurry of interest from the ferroelectric community [65,536]. Ferroelectricity or antiferroelectricity can exist in a wide spectrum of HfO2-based thin ...
and crystallinity of HfO2to confirm its ferroelectric properties; however, it has been challenging to do the same for pure HfO2thus far. HfO2thin films are ferroelectric in their orthorhombic or rhombohedral phase. The epitaxial growth of HfO2thin films makes it possible to analyze the properties ...
Akihiro Akama3, Toyohiko J. Konno3, Osami Sakata4 & Hiroshi Funakubo1,2,5 Ferroelectricity and Curie temperature are demonstrated for epitaxialY-doped HfO2 film grown on (110) yttrium oxide-stabilized zirconium oxide (YSZ) single crystal using Sn-doped In2O3 (ITO) as bottom elec...
Singh, et al., "Incipient Ferroelectricity in Al-Doped HfO2 Thin Films," Adv. Functional Mater. 22 (11), 2412-2417 (2012).S. Muller, J. Muller, A. Singh, S. Riedel, J. Sundqvist, U. Schroeder, and T. Mikolajick, "Incipient ferroelectricity in Al-doped HfO2 thin films," Adv. ...
An out-of-plane polarization value of 50 mu C cm(-2) has been observed at room temperature in Y-doped HfO2(111) epitaxial thin films, with an estimated full value of intrinsic polarization of 64 mu C cm(-2), which is in close agreement with density functional theory calculations. The ...
In 2011, ferroelectricity in Si-doped HfO2 thin films was first reported. Various dopants, such as Si, Zr, Al, Y, Gd, Sr, and La can induce ferro-electricity or antiferroelectricity in thin HfO2 films. They have large remanent polarization of up to 45 渭C cm(-2) , and their ...
epitaxial Si-doped HfO2 thin filmsN-type SrTiO3 substratesferroelectricityXRDPFMHRTEMXASHfO2-based unconventional ferroelectric materials were recently discovered and have attracted a great deal of attention in both academia and industry. The growth of epitaxial Si-doped HfO2 films has opened up a ...