The ferroelectric field-effect transistor FeFET in its simplest form is a MISFET, where the gate dielectric is replaced by a ferroelectric material. The current in the device is modulated by the gate voltage as in conventional MISFETs, but the threshold voltage of the device depends on the pola...
In article number 1906131, Gaokuo Zhong, Xiangli Zhong, Jiangyu Li, and co﹚orkers develop an all﹊norganic flexible ferroelectric field effect transistor (FeFET) based on an epitaxial Pb(Zr0.1Ti0.9)O3/ZnO heterostructure on a mica substrate, which not only operates under a small voltage and...
A field-effect transistor (FET) is a semiconductor device that includes a gate, a source and a drain. A FET uses an electric field applied by the gate to control the electrical conductivity of a channel through which charge carriers (e.g., electrons or holes) flow from the source to the...
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated. 铁电场效应晶体管(FFET)存储器能够实现非破坏性读出,是一种比较理想的存储方式,因此从一开始就受到人们极大的关注。
Recent developments of ferroelectric-gate field-effect transistor (FeFETs) and their applications to integrated circuits are described. The FeFETs with Pt/SrBi2Ta2O9/Hf-Al-O/Si gate stacks possessing excellent data retention characteristics can also operate at elevated temperature and have small ...
Ferroelectric crossbars, which consist of Ferroelectric Capacitors (FeCaps) or Ferroelectric Field Effect Transistors (FeFETs), have emerged as a compelling alternative. Notable attributes, including minimal leakage currents for enhanced energy efficiency and the absence of selector devices, along with th...
Ferroelectric field effect transistor, memory util 优质文献 相似文献 参考文献 引证文献Ferroelectric-gate tunnel field-effect transistor one-transistor ternary contents addressable memory In the era of 'big data', the von Neumann architecture has significant energy consumption and latency penalties for data...
The discovery of ferroelectricity in oxides that are compatible with modern semiconductor manufacturing processes, such as hafnium oxide, has led to a re-emergence of the ferroelectric field-effect transistor in advanced microelectronics. A ferroelectric field-effect transistor combines a ferroelectric materi...
ferroelectric field effect transistoreffective gate capacitancechargedrain voltagesgate voltagesinitial polarizationsferroelectric material/ B2860F Ferroelectric devices B2560R Insulated gate field effect transistorsThere are many possible uses for ferroelectric field effect transistors. To understand their ...
memory solution. Its ferroelectric field-effect transistor (FeFET) and capacitor (FeCAP) technology is simple to integrate, fast, low-power, and scalable, and has high endurance with decades of data retention, suitable for a broad range of AI, IoT, edge, data center, and embedded applications...