An MFMIS-FET includes a MOSFET having a three-dimensional structure that allows the MOSFET to have an effective area that is greater than the footprint of the MFM or the MOSFET. In some embodiment, the gate electrode of the MOSFET and the bottom electrode of the MFM are united. In some...
在理论分析的基础上,结合铁电材料特性及实验数据,提出了Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管转换(ID-VG)特性的双曲模型并进行了数值模拟。 2. Objective To investigate characteristics of p-channel field-effect-transistor(FFET) with Metal/ferroelectric/Metal/Insulator/Si substrates(MFMIS) structure. ...
I摘要铁电场效应晶体管(FeFET)凭借其具有更快的读写速度、更低的功耗以及较强的抗辐照性能等优势已被公认为是最具发展潜力的新型存储器之一。然而,FeFET要达到商业化的要求,还有包括保持性能损失、印记失效、疲劳失效在内的一些失效问题需要解决。而位错、氧空位、退极化场等微观结构是影响晶体管漏-源电流大小的根本...
The MFS structure can be valuable for MFSFET applications.doi:10.1080/10584580390259759Shao, Tian-QiRen, Tian-LingWei, Chao-GangWang, Xiao-NingLi, Chun-XiaoLiu, Jian-SheLiu, Li-TianZhu, JunLi, Zhi-JianTaylor & Francis GroupIntegrated Ferroelectrics...
Figure 2: representation of a typical 3D NAND flash structure (BL=bit line; WP=word plate; BSP=bottom select plate; SP=source plate; TSL=top select line) [2]. By adding more layers instead of shrinking feature sizes, the NAND flash industry abandoned the classical way of scaling. First ...
aHow Corporate Social Performance Is Institutionalised Within the Governance Structure 怎么公司社会表现在统治结构之内协会化 [translate] a我们虽然没有见过面 正在翻译,请等待... [translate] a当流感在社区传播 When flu disseminates in the community [translate] a利用A在DMF中的良好溶解性,尝试在均相体系...
An MFMIS-FET includes a MOSFET having a three-dimensional structure that allows the MOSFET to have an effective area that is greater than the footprint of the MFM or the MOSFET. In some embodiment, the gate electrode of the MOSFET and the bottom electrode of the MFM are united. In some...
An MFMIS-FET includes a MOSFET having a three-dimensional structure that allows the MOSFET to have an effective area that is greater than the footprint of the MFM or the MOSFET. In some embodiment, the gate electrode of the MOSFET and the bottom electrode of the MFM are united. In some...
Metal-Ferroelectric-Metal Structure for FeFET: Empowering High Performance in Data Storage Technologydoi:10.1007/s42341-024-00546-zFerroelectric field effect transistorNon-volatile memoryHZO thin filmsRemanent polarizationWake-up effectFerroelectric field effect transistors (FeFETs) have emerged as a ...
An MFMIS-FET includes a MOSFET having a three-dimensional structure that allows the MOSFET to have an effective area that is greater than the footprint of the MFM or the MOSFET. In some embodiment, the gate electrode of the MOSFET and the bottom electrode of the MFM are united. In some...