FABRICATION OF CMOS TRANSISTORPROBLEM TO BE SOLVED: To prevent formation of a parasitic transistor between a PMOS transistor and an NMOS transistor by coupling the gate electrodes thereof directly through a polysilicon interconnection during a process for forming the gate electrode.TEI SAIKEN...
A transistor structure that increases uniaxial compressive stress on the channel region of a tri-gate transistor comprises at least two semiconductor bodies formed on a substrate, each semiconductor body having a pair of laterally opposi... T Rakshit,Martin D. Giles,T Ghani,... - WO 被引量:...
JUGFET vs MOSFETDifference between NMOS and PMOS devicesDepletion MOSFET vs Enhancement MOSFETApplication Note on MOSFET as Switch and Amplifier What is Difference between BJT vs FETDiac vs TriacLED vs LaserPhoto Diode vs Photo Transistor RF and Wireless Terminologies ...
a P well region, a diffusion layer of polysilicon, an N+ region of polysilicon, a P+ region of polysilicon, an NMOS channel region (implantation of an impurity into a channel opening portion of an NMOS transistor), a PMOS channel region, a gate electrode, a contact hole and an aluminum...
Such MOS transistors can be P-channel (PMOS) or N-channel (NMOS). SRAM cell 30 includes two cross coupled inverters. The first inverter includes a PMOS pull up transitor 32 and an NMOS pull down transistor 34 joined at a common node 36. Transistors 32 and 34 have a common gate ...
Method of fabrication of an Integrated circuit used mainly for radio-frequency applications, has bipolar transistors especially of the hetero-junction type, and insulated gate field effect transistors When the fabrication of the insulated gate field effect transistor is started, then the bipolar transisto...
A short-channel NMOS transistor 300 in a p-well 303, bordered laterally on each side by an isolation region 304 and vertically by a channel stop region 320, has a n-source 310 and a n-drain 312, each comprising a shallow region 311, 313 extending to the transistor gate and a deeper ...
METAL-GATE CMOS DEVICE AND FABRICATION METHOD OF MAKING SAME A metal-gate complementary metal-oxide-semiconductor (CMOS) device is disclosed. The CMOS device includes a PMOS transistor formed on a first area of a substrate and a NMOS transistor formed on a second area of the substrate and ...
The CMOS device includes a PMOS transistor formed on a first area of a substrate and a NMOS transistor formed on a second area of the substrate and being coupled to the PMOS transistor. The PMOS transistor includes a first gate stack consisting of a first dielectric layer, a first single-...
As such, the bipolar transistor is particularly useful in BiCMOS device arrangements. In ... A Tamba,Y Kobayashi,T Matsumoto - US 被引量: 3发表: 1993年 BICMOS device and manufacturing method thereof A BICMOS device and manufacturing method wherein the gates of PMOS and NMOS transistors are ...