Extreme ultraviolet (EUV) lithography is a soft X-ray technology, which has a wavelength of 13.5nm. Today’s EUV scanners enable resolutions down to 22nm half-pitch. In a system, an EUV light source makes use of a high power laser to create a plasma. This, in turn, helps emit a shor...
Proceedings of SPIE - The International Society for Optical EngineeringUS6984475 Nov 3, 2003 Jan 10, 2006 Advanced Micro Devices, Inc. Extreme ultraviolet (EUV) lithography masksUS6984475 2003年11月3日 2006年1月10日 Advanced Micro Devices, Inc. Extreme ultraviolet (EUV) lithography masks...
1) EUV extreme ultraviolet lithography 极端紫外平版印刷2) offset printing 平版印刷 1. The parameter of the dampening solution of offset printing and their function imprinting process were introduced as well as their measurement methods. 主要介绍把平版印刷的润版液参数要求及其在印刷过程中的作用,以及...
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The present disclosure relates generally to a photolithography mask, and, more specifically, to an extreme ultraviolet lithography reflective mask and fabrication methods thereof. Typical EUV photomasks create a mask pattern with an absorber layer patterned on top of a reflective stack. EUV photomasks...
Extreme ultraviolet (EUV) lithographic patterning methods are provided which implement a surface-hardened EUV resist mask to pattern features in multiple layers. A layer of EUV resist material is formed on a substrate. An EUV resist mask is formed by exposing and developing the layer of EUV resis...
Extreme Ultraviolet (EUV) Lithography industry insights on factors that are driving the growth of the Extreme Ultraviolet (EUV) Lithography Market and key players along with their go to market strategies and new revenue sources.
a next-generation lithography technology using an extreme ultraviolet (EUV) wavelength, currently expected to be 13.5 nm. 相关学科: 学科讨论 暂无讨论内容,你可以发起讨论推荐文献 发布年度 会议/ 期刊 按被引用数 Structure of the solar chromosphere. III. Models of the EUV brightness components of ...
3. An optical train for an EUV lithography system, comprising: an extreme ultraviolet light source (602); a collector (604) for collecting EUV light created by the extreme ultraviolet light source and providing the light to a field faced mirror (608) of an illuminator system (606); the ill...
Extreme ultraviolet (EUV) lithography masks 专利名称：Extreme ultraviolet (EUV) lithography masks 发明人：Harry J. Levinson,Bruno M. LaFontaine,Ivan Lalovic,Adam R. Pawloski 申请号：US10699767 申请日：20031103 公开号：US06984475B1 公开日：20060110 专利内容由知识产权出版社提供 专利附图：摘要：An ...