PURPOSE:To enable a substrate to be etched and have step differences formed by a method wherein upper layer thin films and lower layer thin films are formed into different patterns using different types of photomasks and then multiple step differences are formed by one time dry-etching process ...
The present invention uses a two-step etching process, the first step by wet etching using isotropic etching characteristics of an interlayer dielectric in contact with the stepped hole was kind of a bowl-shaped morphology; the second step by dry etching using anisotropic dry etching characteristics...
This invention is directed to an etchant and to a process for its use. The etchant comprises a synergistic combination of hydrogen peroxide and molybdenum as oxidants in acidic solution. The combination of oxidants provides for sustained etching at an exalted rate. The etchant is useful for etc...
PROBLEM TO BE SOLVED: To provide a plasma treating apparatus applicable to the more fine forming and an etching method which is applicable to the more fine forming and enables to perform etching process with higher selectivity. K Masayuki,児島 雅之,S Masahiro,... 被引量: 0发表: 1998年 Dry...
The problem is complicated even by the need for the simultaneous etching of the different aspect ratio features at the same process step. These factors place greater importance on simulation of etch processes using an integrated modeling approach where both, the plasma properties and the details of...
For the removal step, formed etch products were removed by heating for 10 min. immediately after the plasma process on a hot plate (MTOPS, HSD180) preheated to 150 °C in a fume hood located next to the etcher. Also, the temperature and moisture of the etch room were controlled ...
Selective area thermal etching (SATE) of gallium nitride is a simple subtractive process for creating novel device architectures and improving the structural and optical quality of III-nitride-based devices. In contrast to plasma etching, it allows, for
PURPOSE: A method for collecting a sample data in a wafer etching process is provided to enlarge a measurement data automation range of a sample data in an etching process, and provides the measurement data to an operator by on-line method. CONSTITUTION: A sample lot is generated in an oper...
Polyimide film excellent in alkali etching process 优质文献 相似文献Polyimide film excellent in alkali etching processability and unannounced processability Conditions polyimide film according to the present invention, the condition tear propagation resistance variation C By satisfying these conditions it makes....
In this step 0.3 μm of the oxide was removed. The remaining oxide was anisotropically etched in an AME 8110 hexode etcher in a CHF3 / CO2 /He mixture at 72 mTorr and 1250 W. The isotropic oxide etch process was char 展开 DOI: 10.1116/1.575863 ...