Deciphering complex interactions between variables is where machine learning and deep learning shine, but figuring out exactly how ML-based systems will be most useful is the job of engineers. The challenge is in pairing their domain expertise with available ML tools to maximize the value of both...
In-process detection of failure modes using YOLOv3-based on-machine vision system in face milling Inconel 718 It was reported that the synergistic effect of process parameters on the superior properties of Inconel 718 exacerbate the wear mechanisms, leading to rapi... B Tiyamike,JV Lestari,Farid...
“Process window modeling can answer the question, ‘What CD or level of variability do I have to maintain to reach minimum device performance and yield?’ We have completed virtual process window tests with upwards of 1 million virtual wafers in a few days, which would be impossible to accom...
first, if you want a really dark line, you have to go back and forth over it, just like you would with a real etch a sketch. she says krupnik also programmed in a virtual stylus, so as you're etching, you can see the stylus underneath, just like with an actual etch a sketch. ...
in the model using a visibility etch with a 2 degree angular spread and a 60 degree polar angle tilt, to reflect the behavior of grid accelerated ions with low beam divergence. Both wafers are assumed to have free rotation. Other process steps have been adjusted in the virtual fabrication ...
5876903Virtual hard mask for etching1999-03-02Ng et al.430/313 5783366Method for eliminating charging of photoresist on specimens during scanning electron microscope examination1998-07-21Chen et al.430/311 5747803Method for preventing charging effect and thermal damage in charged-particle microscopy1998...
Provided is a process including: obtaining a layout specifying, at least in part, a pattern to be transferred to a substrate via a patterning process and an etch process; and modify
A method and apparatus for etching a silicon layer through a patterned mask formed thereon are provided. The silicon layer is placed in an etch chamber. An etch gas comprising a flu
wherein the method provides a high selectivity of the high-k dielectric to the polysilicon material of about 2 to 20,and wherein the etching as consists of BCl3; consists of BCl3and Ar; consists of BCl3, Cl2and Ar; consists of BCl3and HBr; consists of BCl3HBr, and Ar; or consists...
A method for etching a dielectric layer below a photoresist mask is provided. A wafer with the dielectric layer disposed below a photoresist mask is provided in an etch chamber. An