“Process window modeling can answer the question, ‘What CD or level of variability do I have to maintain to reach minimum device performance and yield?’ We have completed virtual process window tests with upwards of 1 million virtual wafers in a few days, which would be impossible to accom...
focused on Fault Detection and Classification (FDC) on a Lam 9600 aluminum plasma etch reactor, used in the process of semiconductor fabrication. Fault classification was accomplished by implementing a series of virtual sensor models which used data from real sensors (Lam Station sensors, Optical ...
first, if you want a really dark line, you have to go back and forth over it, just like you would with a real etch a sketch. she says krupnik also programmed in a virtual stylus, so as you're etching, you can see the stylus underneath, just like with an actual etch a sketch. ...
Deciphering complex interactions between variables is where machine learning and deep learning shine, but figuring out exactly how ML-based systems will be most useful is the job of engineers. The challenge is in pairing their domain expertise with available ML tools to maximize the value of both...
in the model using a visibility etch with a 2 degree angular spread and a 60 degree polar angle tilt, to reflect the behavior of grid accelerated ions with low beam divergence. Both wafers are assumed to have free rotation. Other process steps have been adjusted in the virtual fabrication ...
A method for etching a feature in an etch layer through a mask over a substrate. The substrate is placed in a process chamber. An etch plasma is provided to the process chamber, whe
focused on Fault Detection and Classification (FDC) on a Lam 9600 aluminum plasma etch reactor, used in the process of semiconductor fabrication. Fault classification was accomplished by implementing a series of virtual sensor models which used data from real sensors (Lam Station sensors, Optical ...
wherein the method provides a high selectivity of the high-k dielectric to the polysilicon material of about 2 to 20, and wherein the etching as consists of BCl3; consists of BCl3 and Ar; consists of BCl3, Cl2 and Ar; consists of BCl3 and HBr; consists of BCl3 HBr, and Ar; or...
1.A method for opening a carbon-based hardmask layer formed on an etch layer over a substrate, the hardmask layer disposed below a patterned mask, comprising:placing the substrate in a plasma processing chamber; andopening the hardmask layer, comprising:flowing a hardmask opening gas including...
A method for etching features in an etch layer disposed below a mask on a process wafer is provided. A hydrocarbon based glue layer is deposited. The etch layer on the process wafer