2N7002T N-CHANNEL ENHANCEMENT MODE MOSFET 说明书 2N7002T Document number: DS30301 Rev. 15 - 2 1 of 5 www.diodes.com August 2018 © Diodes Incorporated Product Summary Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (R DS(ON...
For the n−channel EMOSFET : +VGS⩾VGSthVGS⩾VGSth For the p−channel EMOSFET : −VGS⩾VGSthVGS⩾VGSth Types of EMOSFET N-channel Enhancement MOSFET P-channel Enhancement MOSFETSchematic Symbol of P-channel EMOSFETSchematic Symbol of N-channel EMOSFETExplore...
Parameter Symbol Limit Unit Drain-Source Voltage V DS30 V Gate-Source Voltage V GS±20 V Drain Current-Continuous I D50 A Drain Current-Continuous(T C=100℃) I D (100℃) 35.4 A Pulsed Drain Current I DM200 A Maximum Power Dissipation P D60 W Derating factor 0.4 W/℃ Single pulse ...
20V N-Channel Enhancement-Mode MOSFET 20V N 沟道增强型 MOS 管 HM3416E VDS= 20 ID=4.2 A RDS(ON), Vgs @ 1.8V, Ids @ 3A = 36mΩ RDS(ON), Vgs @ 2.5V, Ids @ 3.8 A = 28mΩ RDS(ON), Vgs @ 4.5V, Ids @ 4.2 A = 24mΩ ESD Protected:2000V Features 特性 Advanced trench...
产品种类: MOSFET RoHS: 是 安装风格: SMD/SMT 封装/ 箱体: SOT-223-4 通道数量: 1 Channel 晶体管极性: N-Channel Vds-漏源极击穿电压: 60 V Id-连续漏极电流: 2.8 A Rds On-漏源导通电阻: 170 mOhms Vgs - 栅极-源极电压: 20 V 最小工作温度: - 65 C 最大工作温度: + 150 C Pd-功率耗...
首先说MOSFET管的作用,可以作为高阻输入端的放大级,也可以作为大电流驱动的功率级,根据不同应用,使用的管子类型参数也不一样。N-Channel意为N沟道,与NPN三极管的极性接法类似;相反的,P沟道的管子就像PNP三极管了。Enhancement Mode意为增强型,栅极悬空时默认的,管子为不导通,需要在栅极加上与N或...
产品种类 MOSFET RoHS 是 安装风格 SMD/SMT 封装/ 箱体 TO-252-3 通道数量 1 Channel 晶体管极性 N-Channel Vds-漏源极击穿电压 60 V Id-连续漏极电流 12 A Rds On-漏源导通电阻 180 mOhms Vgs - 栅极-源极电压 20 V 最小工作温度 - 55 C 最大工作温度 + 175 C Pd-功率耗散...
网络场效应管 网络释义 1. 场效应管 电气工程常用中英文名词对译 - 豆丁网 ... 增强型 MOS场效应管enhancement mode MOSFET源极 source ... www.docin.com|基于15个网页
P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPP3413S23RG SOT-23-3L ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP3413S23RG : Tape Reel ; Pb – Free Part Marking...
ChannelEnhancementModeMOSFETELECTRICALCHARACTERISTICS(TA=25Unlessotherwisenoted)℃ParameterSymbolConditionsMin.TypMax.UnitStaticDrain-SourceBreakdownVoltageV(BR)DSSVGS=0V,ID=250uA60GateThresholdVoltageVGS(th)VDS=VGS,ID=250uA0.82.0VGateLeakageCurrentIGSSVDS=0V,VGS=±20V±100nAVDS=60V,VGS=0V1ZeroGate...