2N7002T N-CHANNEL ENHANCEMENT MODE MOSFET 说明书 2N7002T Document number: DS30301 Rev. 15 - 2 1 of 5 www.diodes.com August 2018 © Diodes Incorporated Product Summary Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (R DS(ON...
2500 V ~M d Mounting Torque 1.13 / 10 Nm/lb.in Weight 2.5 g (Electrically Isolated Tab)X-Class HiPerFET TM Power MOSFET G = Gate D = Drain S = Source OVERMOLDED TO-220 G D S Isolated Tab
20V N-Channel Enhancement-Mode MOSFET 20V N 沟道增强型 MOS 管 HM3416E VDS= 20 ID=4.2 A RDS(ON), Vgs @ 1.8V, Ids @ 3A = 36mΩ RDS(ON), Vgs @ 2.5V, Ids @ 3.8 A = 28mΩ RDS(ON), Vgs @ 4.5V, Ids @ 4.2 A = 24mΩ ESD Protected:2000V Features 特性 Advanced trench...
Max. Unit - -V - 1 μA - ±100 nA 1.1 1.4 V 5.5 6.6 6.5 8 mΩ 16 20 Dynamic Characteristics Parameter Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-on delay Time Rise time Turn-off delay Time ...
NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.General Features ● V DS =30V,I D =50A R DS(ON) < 11mΩ @ V GS=10V...
NOT RECOMMENDED FOR NEW DESIGN USE DMN3030LSS DMN3031LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 18.5mΩ @ VGS = 10V • 31mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output...
PWM Server power supply Charger , OSG90R1K2AF, OSG90R1K2IF, OSG90R1K2FF Enhancement Mode N-Channel Power MOSFET General Description OSG90R1K2xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. Th...
P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance ...
AP2N150MP RVE1.0 永源微電子科技有限公司 Typical Characteristics AP2N150MP 1500V N-Channel Enhancement Mode MOSFET Figure 1. Output Characteristics Figure 2. Body Diode Forward Voltage Figure3. Drain Current vs. Temperature Figure4. BVDSS Variation vs. Temperature Figure 5. Transfer Characteristics ...
ISSUE 1 - JANUARY 2002 3 ZXMN3A02X8 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS 30 V ID=250µA, V GS=0V Zero Gate Voltage Drain Current IDSS 1 µA V DS=...