energy band structure 美 英 un.能带结构 英汉 un. 1. 能带结构 例句 释义: 全部,能带结构
energy band structure 能带结构 energy band 能带,能量带 band structure 【化】 能带结构 energy structure 能力构造(动态艺术之一种, 有马达、机械或电子仪器等装置) band overlap energy 能带重叠能量 band edge energy 带边能量 allowed energy band 容许能带 band gap energy 带隙能 energy band ...
The energy band structure is the relationship between the energy and momentum of a carrier in a solid. For an electron in free space, the energy is proportional to the square of the momentum. The factor of proportionality is 1/2 m 0 , where m 0 is the free electron mass. In the ...
4) energy band 能带结构 1. Using the geometric configuration optimized from ab initio calculation, theenergy bandstructure of CO adsorption on MgO(001) defective and irregular surfaces were studied by EHT crystal orbital method. 采用从头算程序优化MgO表面三种不同配位位置吸附CO构型,并用扩展休克尔紧束...
The electron density of tetragonal ZnP2 and Cdh2 has been calculated by the pseudopotential method. The valence band of ZnP2 and CdP2 consists of 48 subbands grouped into 4 subbands. The Zn(Cd)-P bond proved to be ionic-covalent, with a bond charge of ~0.01(2)e whose maximum is ...
Energy band structure in multistream model To this end, it is straightforward to generalize the model to include a large number of streams each characterized by its de Broglie’s wavenumber,\(k_N\). Therefore,N-coupled differential equation system read ...
Energy Band Gap and Band Structure Theenergy band gapEG(x,T) of Hg1−xCdxTe varies continuously, and nearly linearly, withalloy compositionparameterx, ranging from 1.6eV for the wide-gap semiconductor CdTe to −0.3eV for thesemimetalHgTe, as shown inFigure 1a. Also plotted inFigure 1ais...
Energy band theory and band structure of Semiconductor| Differnce betw... 30:22 On the basis of band theory , explain the difference between conductor... 04:01 Distinguish between conductors, insulators and semiconductors on the b... 05:15 Distinguish between a conductor , a semiconductor and...
Energy-band structure in strained silicon: A 20-band k·p and Bir–Pikus Hamiltonian model. A strain Bir-Pikus Hamiltonian H[sub st], associated with a 20-band sp³s* k·p Hamiltonian H[sub kp], is used to describe the valence band and the first... Richard,Soline,Aniel,... - ...
The energy band structure of CdSnA 2 and CdGeAs 2 2 is calculated by the empirical-pseudopotential method, taking account of spin-orbital interaction. The... YI Polygalov,AS Poplavnoi - 《Soviet Physics Journal》 被引量: 0发表: 1981年 CdSe/CdS quantum dots co-sensitized TiO2 nanotube arra...