Melting of Elemental and Compound Semiconductors: A Semiconductor-Metal Transition?The application of extreme conditions (high temperatures and pressures) to semiconducting materials is interesting as it offers conditions of drastic changes in the nature of the chemical bond. In most cases, at the ...
electronic transport in nanoscale materials and structuresgeneral formulation of transport theoryelemental semiconductorsWe study the consequences of interference ... Sungjun Kim,Kunal K. Das,Ari Mizel - Physical review 被引量: 0发表: 2007年 The influence of low copper doping concentrations on the recr...
Thallium bromide (TlBr) is a compound semiconductor with a high atomic number and wide band gap, being a very promising material to be used as room temperature radiation detectors. The commercial TlBr powder is used for growing crystals for detector applications. To reduce impurities, this materi...
Biomineralization, the precipitation of various inorganic compounds in biological systems, can be regulated in terms of the size, morphology, and crystal structure of these compounds by biomolecules such as proteins and peptides. However, it is difficult to construct complex inorganic nanostructures becau...
G. Impurity clustering and impurity-induced bands in PbTe-, SnTe-, and GeTe-based bulk thermoelectrics. Phys. Rev. B 81, 115106 (2010). 24. Vurgaftman, I., Meyer, J. R. & Ram-Mohan, L. R. Band parameters for III-V compound semiconductors and their alloys. J. Appl. Phys. 89,...
The surface morphology of the annealed Te/Zn stack was also analyzed and observed as very smooth, compact and dense surface. The prepared film was Zn rich evidenced by EDAX. The observed result encourages in pursuing the SEL method for the preparation of compound semiconductor from II-VI group...
1. A metal insulating semiconductor device comprising: a semiconductor substrate formed from a compound of III-V semiconductor material, and an insulating layer formed from an elemental pniotide material on said semiconductor substrate. 2. A metal insulating semiconductor device comprising: a semic...
Crystal-orientation-dependent physical sputtering yields of W, Mo, Pt and Cu for 5 and 30keV Ga determined.Experimentals yields well reproduced by molecular dynamics and binary collision approximation simulations.Secondary electron emission intensities by Ga impact not always linear correlated to sputterin...
Under sufficiently high dose and energy, ions implanted into a semiconductor will produce an amorphous layer throughout the range in which nuclear stopping is the dominant mechanism for slowing the ions. In arsenic implanted silicon, for... J Opsal - Springer US 被引量: 12发表: 1989年 Effectiv...
1. A semiconductor processing method comprising: forming a substantially amorphous Ta2O5 comprising layer over a semiconductive substrate; and exposing the layer to WF6 under conditions effective to etch substantially amorphous Ta2O5 from the substrate. 2. The method of claim 1 wherein the exposin...