Melting of Elemental and Compound Semiconductors: A Semiconductor-Metal Transition?The application of extreme conditions (high temperatures and pressures) to semiconducting materials is interesting as it offers conditions of drastic changes in the nature of the chemical bond. In most cases, at the ...
Green\"s-function theory of impurity vibrations due to defect complexes in elemental and compound semiconductors Green's-function theory has been reported for studying the vibrations of impurity complexes with a maximum of three defect centers in zinc-blende-type crys... M Vandevyver,DN Talwar -...
4H-SiC and GaN (0001) oriented surfaces compare to the Si (111) surface in terms of planar density of atoms, therefore the charge densities in MOS devices fabricated on these surfaces can be compared. The positive charge and deep "Border" trap densities in the MOS devices on 4H-SiC (0001...
Several research groups have recently reported the growth of metastable semiconductors which were not only single phase but, in many cases, high quality single crystals. The systems reported to date include the (III–V)1xIVx alloys (GaAs)1xSix, (GaAs)1xGex, and (GaSb)1x Gex, the noniso...
not only for drug-related samples and explosives but also for various other samples like textiles or soils. XRD analyses can confirm findings from complementary analytical techniques like mass spectrometry. They can also provide additional...
R. Band parameters for III-V compound semiconductors and their alloys. J. Appl. Phys. 89, 5815–5875 (2001). 25. Wood, C. Materials for thermoelectric energy conversion. Rep. Prog. Phys. 51, 459–539 (1988). 26. Rosi, F. D., Hockings, E. F. & Lindenblad, N. E. ...
The Electronic Configuration of121Sb in Semiconductors Isomer shifts of the 37 ke V M枚ssbauer transition in 121Sb are determined for 121Sb constituents and impurities in III-V and II-VI compound semiconductors... G Weyer,H Andreasen,HD Waard - 《Physica Status Solidi》 被引量: 6发表: 1985...
Controversies have shrouded this element since its discovery was announced in 1808: the new ‘element’ turned out to be a compound containing less than 60–70% of boron, and it was not until 1909 that 99% pure boron was obtained1. And although we now know of at least 16 polymorphs2, ...
Metal-insulator-semiconductor devices are formed on III-V semiconductors utilizing a pnictide rich insulating layer. The layer may be applied by vacuum evaporation, sputtering, chemical vapor deposition, and from a liquid melt. Gallium arsenide, indium phosphide, and gallium phosphide substrates are ...
Today the main industrial applications for elemental fluorine are fuel tank fluorination for cars and cleaning of CVD tools during the production of semiconductors. Fig. 01: The raw material: fluorspar crystal from the Solvay mine in Okorusu, Namibia. 4 Elemental Fluorine Solvay Special Chemicals ...