Electrical Characteristics of CMOS-Compatible SiO x -Based Resistive-Switching Devicesdoi:10.3390/nano13142082COMPLEMENTARY metal oxide semiconductorsTITANIUM nitrideOHM'S lawCHEMICAL vapor depositionSILICON oxideELECTRON transportNITRIDESThe electrical characteristics and resistive switching properties of...
Impact of device scaling on the electrical properties of MoS2 field-effect transistorsGoutham Arutchelvan, Quentin Smets, Devin Verreck, Zubair Ahmed, Abhinav Gaur, Surajit Sutar, Julien Jussot, Benjamin Groven, Marc Heyns, Dennis Lin, Inge Asselberghs & Iuliana Radu ...
The electrical properties of heterojunctions composed of polycrystalline films of beta-irondisilicide and n-type germanium substrate are investigated. The heterojunctions have been prepared by co-sputtering of iron and silicon on germanium substrate followed by thermal annealing. The samples were prepared ...
However, it is still a great challenge for the large-scale synthesis of III-V NWs with well-controlled and uniform morphology as well as reliable electrical properties, especially on the low-cost noncrystalline substrates for practical utilization. In this study, high-density GaAs NWs with ...
Herein, we studied the effect of H2 pressure on the chemical/electrical properties of HfO2/Al2O3 gate dielectrics deposited via ALD on HCl wet-cleaned In0.53Ga0.47As substrates. Possible out-diffusion of the substrate elements and their subsequent incorporation into the high-k film were examined...
Atomic force microscopy (AFM) has been used to fabricate and electrically characterize SiOfilms as gate dielectrics of metal-oxide-semiconductor (MOS) elec... M Porti,X Blasco,aM Nafr,... - 《Nanotechnology》 被引量: 9发表: 2003年 Investigation of the electrical properties of the alkaline-...
Photocurrent spectroscopy and transient photocurrent measurements are employed in order to investigate the change in barrier heights and density of traps within low- k dielectric films under bias stressing conditions. By characterizing these fundamental physical properties, we hope to gain an understanding ...
Annealing effect on electrical properties of Zr-doped HfO{sub}x gate dielectrics for Nanoscale CMOS application Today's transistor geometries shrink to the nanoscale regime to keep pace with Moore's law, the conventional silicon dioxide gate dielectric becomes just a... S Chatterjee,Y Kuo,J Lu,...
Organic CuTCNQ non-volatile memories for integration in the CMOS backend-of-line: Preparation from gas/solid reaction and downscaling to an area of 0.25μm 2 CuTCNQ is an organic semiconductor charge transfer material that allows the realization of non-volatile cross-bar memory arrays with ...
www.nature.com/scientificreports OPEN received: 22 September 2015 accepted: 09 June 2016 Published: 01 July 2016 Nanoscale electrical properties of epitaxial Cu3Ge film Fan Wu, Wei Cai, Jia Gao,Yueh-Lin Loo & Nan Yao Cu3Ge has been pursued as next-generation interconnection/...