Walczyk D. et al. . Resistive Switching Characteristics of CMOS Embedded HfO 2 -Based 1T1R Cells . Microelectron. Eng. 88 , 1133–1135 (2011).WalciznyZkr,OD2.;1WT1aRlcRzRyAk,MC. .I;ESEcEhTroraendse. rE,leTc.t;roBnerDteavuicde,sTL.e;ttS.o2w01i1艅,s3k2a, ,1M02.6;-L1u02k8o...
Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiN x -based resistive memory Lee DK, Cho S, Lee JH, Park BG (2017) Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory. ... MH Kim,S Kim,S Bang,.....
Resistive Switching Characteristics of CMOS Embedded HfO2-Based 1T1R Cells. Microelectron. Eng. 88, 9. Calka, P. et al. Chemical and Structural Nanotechnology 24, 085706 (2013). Properties of Conducting Nanofilaments in TiN/HfO2 -Based Resistive Switching Structures. 10. Sowinska, M. et ...
Ijaz Talib1, Muhammad Imran1, Khalid Mehmood3, Khalid Iqbal4 & M. Younus Nadeem1 Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been inve...
The MR dampers and switched-coupling based energy dissipation strategy have similar characteristics that the energy pumping mechanism is dynamic stiffness and damping modulation, and the dissipation of trapped energy in DVAs is structural damping. The two dissipation strategies mentioned above always functi...
Such a capability of Ni appears acting as top electrode in Ni/CeO2/Pt memory devices, but its RS behavior is not so good. On inserting Zr layer to make Ni/Zr:CeO2/Pt memory stacks, Ni does not contribute in RS characteristics, but Zr plays a vital role in forming CFs by creating ...
Dopant concentration dependent resistive switching characteristics inCu/SiN x /Si structureSungjun Kima , Min-Hwi Kim a , Tae-Hyeon Kim a , Seongjae Cho b , Byung-Gook Park a , *a Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul ...
Nanoscale resistance-switching cells that operate via the electrochemical formation and disruption of metallic filaments that bridge two electrodes are among the most promising devices for post-CMOS electronics. Despite their importance, the mechanisms t
A charge pump implemented in a CMOS monolithic circuit provides a precise output charging current source or current sink with fast switching characteristics. Each of two CMOS output transistors is connected via a transmission gate to a transistor having a constant current flow through it. An MOS ca...
3. Switching Characteristics of the CMOS Inverter The fundamental technology of any digital IC relies on the inverter. The inverter serves as the basic block. Its switching characteristics play a critical role in describing the technology. The performance speed of a digital system is contingent on ...