Byung-Gook ParkSolid-State ElectronicsKim MH, Kim S, Bang S, Kim TH, Lee DK, Cho S, Lee JH, Park BG (2017) Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory. Solid State Electron 132:109-114...
Resistive Switching Characteristics of CMOS Embedded HfO2-Based 1T1R Cells. Microelectron. Eng. 88, 9. Calka, P. et al. Chemical and Structural Nanotechnology 24, 085706 (2013). Properties of Conducting Nanofilaments in TiN/HfO2 -Based Resistive Switching Structures. 10. Sowinska, M. et ...
It is found that the memory characteristics at current compliance (CC) of 80 A is acceptable for real application; however, data are becoming worst at CC of 10 A. Therefore, it is very challenging to reduce the operation current (few microampere) of the RRAM devices. This study ...
We investigate experimentally metal-insulator-silicon-insulator-metal (MISIM) waveguides that are fabricated by using fully standard CMOS technology. They ... Min-Suk,Kwon,Jin-Soo,... - 《Optics Express》 被引量: 28发表: 2012年 Static characteristics of metal-insulator-semiconductor-insulator-metal...
Ijaz Talib1, Muhammad Imran1, Khalid Mehmood3, Khalid Iqbal4 & M. Younus Nadeem1 Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been inve...
Such a capability of Ni appears acting as top electrode in Ni/CeO2/Pt memory devices, but its RS behavior is not so good. On inserting Zr layer to make Ni/Zr:CeO2/Pt memory stacks, Ni does not contribute in RS characteristics, but Zr plays a vital role in forming CFs by creating ...
Dopant concentration dependent resistive switching characteristics inCu/SiN x /Si structureSungjun Kima , Min-Hwi Kim a , Tae-Hyeon Kim a , Seongjae Cho b , Byung-Gook Park a , *a Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul ...
In this letter, bipolar resistive switching in TiO2-based memory elements deposited on CMOS-compatible W-plugs is examined. By comparison with a Pt/TiO2/W ... C Hermes - 《IEEE Electron Device Letters》 被引量: 28发表: 2011年 Resistive switching characteristics of Pt/CeOx/TiN memory device...
X-ray diffraction (XRD) analysis was performed after studying the resistive switching characteristics of each device. XRD spectra were obtained by using grazing incidence (3°) on the TaN/CeO2/Ti/CeO2/Pt and Ti/CeO2/Ti/CeO2/Pt stacks as shown inFig. 1(a,b). Both TaN and Ti TE-base...
Due to proven CMOS compatibility, available material deposition/process tools in the foundry, HfOx and TaOx-based RRAM devices have had the highest research interest compared to other stacks25. In this work, we focus on benchmarking analog performance such as the number of states, dynamic range...