DUAL-GATE STRUCTURE AND ITS MANUFACTUREPROBLEM TO BE SOLVED: To obtain a dual-gate structure in which the mutual diffusion of impurities between gate electrodes is suppressed excellently.SUMI HIROBUMI角▲博▼文
Pentacene Organic Thin-Film Transistors with Dual-Gate Structure We report on the fabrication of dual-gate pentacene organic thin-film transistors (OTFTs) using a plasma-enhanced atomic layer deposited (PEALD) 150 nm thi... JB Koo,JW Lim,CH Ku,... - 《Solid State Phenomena》 被引量: 27...
Semiconductor devices including dual gate structures and methods of forming such semiconductor devices are disclosed. For example, semiconductor devices are disclosed that include a first gate stack that may include a first conductive gate structure formed from a first material, and a second gate stack...
A metal-induced laterally crystallized silicon thin-film transistor (TFT) with an asymmetric-channel dual-gate structure was fabricated and characterized. It features a sub-TFT near the drain with multichannel consisting of narrower unit channel width, resulting in higher field-effect mobility compared...
Novel L-Shaped Dual-Gate Structure of Polycrystalline Silicon Thin-Film Transistors for the Reduction of the Kink Current in Sequential Lateral Solidificat... An L-shaped dual-gate device structure, which reduces kink current in polycrystalline silicon thin-film transistors (poly-Si TFTs), has bee...
gate structure secondary gate electrode Schottky gate drain contact actual transistor dielectric breakdown leakage current trapped charges stress test InAlN-GaN SiN/ B2560S Other field effect devices B0170N Reliability B2550E Surface treatment (semiconductor technology)/ InAlN-GaN/int InAlN/int GaN/int...
This work investigates the effects of temperature and dual-gate structure on the sensitivity of FDSOI-ISFET. By using a planar dual-gate structure, the sensitivity of a single FDSOI-ISFET on the chip can be adjusted independently by changing the control gate voltage rather than adjusting the ba...
A biosensor with a dual gate structure is disclosed herein. The biosensor comprises: a transistor, a sensing pad, and a plurality of nanostructures. The sensing pad has a conductive
The immutable Nernst response can be dramatically transformed to an ultra-sensing margin, with the capacitive-coupling arisen from the DG structure. In order to advance this platform, we here embedded the ultra-thin body (UTB) into the DG ISFET. The UTB of 4.3 nm serves to not only ...
A memory merged logic (MML) semiconductor device of NMOS and PMOS dual gate structure including embedded memory of a self-aligned structure and a method of manufacturing the same, wherein in the MML semiconductor device, the memory area including n-type metal oxide semiconductor (NMOS) and p-...