Methods for forming a dual gate structure for a vertical TFT are described. The dual gate structure may be formed by performing a first etching process that includes forming a first set of trenches by etching a first set of oxide pillars to a first depth and forming a second set of ...
Device Characteristics of Pentacene Dual-Gate Organic Thin-Film Transistor We fabricated pentacene organic thin-film transistors (OTFTs) with a dual-gate structure, in which 300-nm-thick thermally grown SiOand 500-nm-thick parylen... JB Koo,KS Suh,IK You,... - 《Japanese Journal of Applied...
dual gate structure secondary gate electrode Schottky gate drain contact actual transistor dielectric breakdown leakage current trapped charges stress test InAlN-GaN SiN/ B2560S Other field effect devices B0170N Reliability B2550E Surface treatment (semiconductor technology)/ InAlN-GaN/int InAlN/int GaN...
Semiconductor devices including dual gate structures and methods of forming such semiconductor devices are disclosed. For example, semiconductor devices are disclosed that include a
Dual gate structure and method for forming the same in semicondictor device A dual gate structure of a semiconductor device is provided to prevent metal oxide positioned under a gate electrode from being attacked by using the same metal material as a gate electrode in a dual gate structure to ...
Vertically-Stacked Si Nanowire FETs with sub-micrometer Gate-All-Around polysilicon gates patterned by nanostencil lithography Future technological innovations enabling ever higher circuit densities predicted by Moore's law will most likely be concentrated on novel materials, innovative device structures, an...
Proposed is a fast V_(TH) compensation pixel circuit utilizing the secondary gate effect of a-IGZO TFTs with the dual-gate structure. V_(TH) extraction is done via the faster bottom channel, resulting in very short V_(TH) sampling time. To verify the operation of pixel circuit, DG mode...
(chowj@kw. ac.kr) Performance Enhancement of Capacitive-Coupling Dual-gate Ion-Sensitive Field-Effect Transistor in Ultra-Thin-Body Hyun-June Jang & Won-Ju Cho Department of Electronic Materials Engineering, Kwangwoon University, 447-1, Wolgye-dong, Nowon-gu, Seoul 139-701, Republic of Korea...
Planar dual-gate non-volatile memory device The present invention provides a semiconductor structure, including a substrate, a gate dielectric layer disposed on the substrate, a charge storage layer ... PH Jen 被引量: 0发表: 2018年 Two-port dual-gate HEMT for discrete device application A two...
By determining the value C1 of the capacitor C1 and the value CD of the diode D1 of the capacitor correction circuit, the capacity of a dual-gate FET can be corrected so that a change CG1 in capacity of the first gate capacity CG1 which arises from the structure of the dual-gate ...